Enhanced boron gettering effect of n-type solar grade Si wafers by in situ oxidation

Cho, Young Joon; Chang, Hyo Sik

doi:10.1007/s12540-013-6035-6

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…Then boron diffusion process formed a surface sheet resistance of 30Ω/□, and then, 2% HF is used to remove the BSG. Then different methods is used to remove the BRL [6]. After the removal of the BRL by chemical etching, the porous silicon is removed by using 1% NaOH solution for about 20s, so that the sheet resistance increases to about 60Ω/□.After that, AL 2 O 3 is used on both sides of the silicon wafers to passivate the substrate surface.…”

Section: Methodsmentioning

confidence: 99%

Effects and methods of the BRL removal in solar cell

Jiang¹,

Dai²,

Tao³

et al. 2017

Proceedings of the 3rd Workshop on Advanced Research and Technology in Industry (WARTIA 2017)

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Boron diffusion is a conventional process in N-type silicon solar cells fabrication. The boron-rich layer (BRL) usually formed on the surface of silicon wafer in boron diffusion process, and the effective carrier lifetime can be sharply reduced by the BRL. In this paper, three methods were used to remove the BRL: high temperature nitric acid (HT-HNO 3 ) oxidation, chemical etching treatment (CET) and low temperature thermal oxidation (LTO). ECV and TEM are employed to characterized the dopant profiles and morphology of the silicon substrate surface after removing the BRL with different methods. Furthermore, the effective carrier lifetime of the samples is obtained by sinton instrument, and the reflectivity of the samples is measured. By analysis of the result date, we can conclude that the CET method can effectively remove the BRL and cause less carrier lifetime degradation comparing with other methods. What's more, the CET method have the most less influence on the doping profiles while removing the BRL. However, the CET method will cause a greater increase of the surface reflectivity than other methods.

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Section: Methodsmentioning

confidence: 99%