High efficiency n-PERT solar cells by B/P co-diffusion method

Quan, Wei; Zhang, Shude; Yu, Shuanglong; Lu, Jing; Lian, Wei; Ni, Zhichun

doi:10.1016/j.egypro.2017.09.345

Cited by 13 publications

(4 citation statements)

References 7 publications

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“…2 Considering the manufacturing steps, the current PERC solar cell production lines are seen to be adaptable to the PERT solar cells due to the many similarities in the fabrication techniques, such as surface texturing, diffusion process, removal of the heavily doped rear surface, deposition of dielectric layers (ALD: Al 2 O 3 and PECVD: SiN x ), and metal screen printing. 5 PERT solar cells have already been extensively studied in the literature with various fabrication routes, particularly based on the doping method, such as diffusion furnace, 6,7 ion implantation, [8][9][10][11] atmospheric pressure chemical vapor deposition (APCVD), 12 plasma-enhanced chemical vapor deposition (PECVD), 13 spin-on doping, 14,15 or their use together. One of the challenges for the fabrication of PERT solar cells is the existence of the two doping steps for the rear and front surfaces, which necessitate protecting one side while doping the other at least once in the use of double-side doping methods such as furnace diffusion.…”

Section: Introductionmentioning

confidence: 99%

A comparative study on alternative industrial manufacturing routes for bifacial n‐PERT silicon solar cells

Bektaş,

Seyrek,

Keçeci

et al. 2023

Progress in Photovoltaics

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Bifacial n‐PERT solar cells, taking advantage of the superior material quality of n‐type Si wafers and the high bifaciality potential of the design, can be fabricated by the existing industrial manufacturing methods. Here, we compare five alternative process flows to manufacture the bifacial n‐PERT solar cells. The complexities of their fabrication routes vary mainly according to the applied doping methods (either diffusion or ion implantation) and the rear side morphology (either alkaline textured or hardly etched pyramidal surface). We also analyze the performance of the devices fabricated by each process flow. Our results indicate that the solar cells with a B‐diffused emitter and P‐implanted BSF yield higher efficiencies than the others. In addition, the n‐PERT solar cells with hardly etched pyramidal rear surfaces have slightly higher efficiency than those with textured rear surfaces. Moreover, we studied the responses of the n‐PERT solar cells against the degradation and regeneration processes applied to boron‐doped p‐type Si solar cells under dark annealing, light soaking, and illuminated annealing. They are not significantly influenced by light‐induced degradation (LID); however, the fill factor (FF) value of the cell with hardly etched pyramidal rear surfaces is sensitive to the illuminated annealing process.

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Section: Introductionmentioning

confidence: 99%

A comparative study on alternative industrial manufacturing routes for bifacial n‐PERT silicon solar cells

Bektaş,

Seyrek,

Keçeci

et al. 2023

Progress in Photovoltaics

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“…Nowadays n ‐type monocrystalline silicon (mono‐Si) solar cells are becoming more important for photovoltaic (PV) industry due to their high‐efficiency potential and inherently good bifaciality . Typical bifacial n ‐type mono‐Si solar cells, known as front and back contact ( n FAB) cells at SERIS, adapt the passivated emitter and rear totally diffused (PERT) p + – n – n + structure, with the use of a full area phosphorus‐doped back surface field (BSF) . Currently, three types of diffusion techniques/tools are available for BSF formation: tube diffusion using phosphoryl chloride (POCl 3 ), ion implantation, and atmospheric pressure chemical vapor deposition (APCVD).…”

Section: Introductionmentioning

confidence: 99%

Development of High‐Efficiency n‐Type Front and Back Contact Passivated Emitter and Rear Locally Diffused Solar Cells Using Atmospheric Pressure Chemical Vapor Deposition of Phosphosilicate Glass and Laser Processing

Yan

Ning

Suhaimi

et al. 2020

Physica Status Solidi (a)

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Industrial bifacial n‐type front and back contact (nFAB) silicon solar cells, consisting of a boron‐doped p+ emitter and a phosphorus‐doped n+ back surface field (BSF), are known to give good bifaciality, high and stabilized efficiency. One possible approach to further enhance the cell efficiency is to convert conventional passivated emitter and rear totally diffused (PERT) into rear locally diffused (PERL) structure. Herein, bifacial nFAB PERT and PERL cells are fabricated by combining atmospheric pressure chemical vapor deposition (APCVD) of phosphosilicate glass (PSG) as doping source and laser processing. For PERL cells, two approaches are studied to locally form phosphorus‐doped BSF: 1) laser doping, and 2) laser ablation of a diffusion barrier layer. For ablation approach, an alkaline treatment is introduced immediately after laser process, which leads to the formation of locally textured BSF. Due to this locally textured contact, the resultant fill factor (FF) and series resistance (Rs) loss of the PERL cells are even less than that of the reference PERT cells. As a result, the champion cell of PERL shows a good efficiency of 21.3% with open‐circuit voltage (Voc) of 662 mV, short‐circuit current density (Jsc) of 39.6 mA cm−2, and a high FF of 81.1%.

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“…Most of them have demonstrated high boron emitter electrical qualities such as spin‐on coating, screen printing, codiffusion from atmospheric pressure chemical vapor deposition (APCVD) of doped layers, and ion implantation . Some of these single‐side doping techniques are already used in high‐efficiency n‐type solar cells …”

Section: Introductionmentioning

confidence: 99%

“…7 Some of these single-side doping techniques are already used in high-efficiency n-type solar cells. 8,9 Among these techniques, this paper focuses on ion implantation, which presents other advantages as the possibility of local doping thanks to an in situ masking 10 that can strongly simplify the process flow of selective emitters and IBC cells, the ability to easily and precisely control the dopant concentration and distribution as well as the high uniformity and reproducibility of the doping. 11 In addition, very high-emitter quality has been reported using a beamline ion implantation (BLII) of B + ions, with emitter saturation current densities (J 0e ) lower than 40 fA/cm 2 , 12 along with promising PV conversion efficiencies up to 21.8% with screen-printed n-PERT cells.…”

Section: Introductionmentioning

confidence: 99%

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Lanterne

Desrues

Lorfeuvre

et al. 2019

Progress in Photovoltaics

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Ion implantation is a suitable and promising solution for the massive industrialization of boron doping, which is a crucial process step for most next‐generation solar cells based on crystalline silicon (c‐Si). However, the use of ion implantation for boron doping is limited by the high temperature (in the 1050°C range) of the subsequent activation anneal, which is essential to dissolve the boron clusters and reach a high‐emitter quality. In this work, we propose the use of plasma‐immersion ion implantation (PIII) from B2H6 gas precursor instead of the standard beamline ion implantation (BLII) technique to decrease this temperature down to 950°C. PIII and BLII boron emitters were compared with annealing temperatures ranging from 950°C to 1050°C. Contrary to BLII, no degradation of the emitter quality was observed with PIII implants annealed at 950°C along with a full activation of the dopants in the emitter. At 1000°C, emitter saturation current densities (J0e) below 21 fA/cm2 were obtained using the PIII technique regardless of the tested implantation doses for sheet resistances between 110 and 160 Ω/sq. After metallization steps, the metal/emitter contact resistances were assessed, indicating that these emitters were compatible with a conventional metallization by screen‐printing/firing. The PIII boron emitters' performances were further tested with their integration in n‐type passivated emitter rear totally diffused (PERT) solar cells fully doped by PIII. Promising results already show a conversion efficiency of 20.8% using a lower annealing temperature than with BLII and a reduced production cost.

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High efficiency n-PERT solar cells by B/P co-diffusion method

Cited by 13 publications

References 7 publications

A comparative study on alternative industrial manufacturing routes for bifacial n‐PERT silicon solar cells

A comparative study on alternative industrial manufacturing routes for bifacial n‐PERT silicon solar cells

Development of High‐Efficiency n‐Type Front and Back Contact Passivated Emitter and Rear Locally Diffused Solar Cells Using Atmospheric Pressure Chemical Vapor Deposition of Phosphosilicate Glass and Laser Processing

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

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