Effects of residual copper selenide on CuInGaSe<inf>2</inf> solar cells

Low-Temperature Structure and Dynamics in Cu2Se

“…Additional interest has been based on its potential as an active material for photovoltaic devices 5,6 and its relation to other photovoltaics based on copper chalcogenides. 7 Advances in synthesis of nanowires and nanostructures may enhance these possibilities, allowing the functionality to be tailored for useful applications. [8][9][10] As a semiconductor, Cu 2−x Se is a p-type self-doped material dominated by native Cu vacancies, which are associated with the observed Cu-deficient stoichiometry.…”

Annealing treatment of Cu(In,Ga)Se2 absorbers prepared by sputtering a quaternary target for 13.5% conversion efficiency device

“…As indicated in some publications (Niki et al, 1999;Hsieh et al, 2011), Cu rich CIGS with residual Cu-Se compounds acts as a highly conducive p-type semiconductor. Cu-Se compounds are p-type semiconductors with a low resistivity and a high hole density (Ting and Lee, 2012;Ouyang et al, 2014).…”

“…Both of them cause a continuous decrease of carrier density. In the other hand, Cu-Se phase may act as recombination centers (Hsieh et al, 2011). As a result, the carrier mobility maintains at a low level for samples annealed below 380°C.…”

Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

“…The films present almost no noticeable photocurrent response (PCR), except for the Na-doped and the Cs-doped films. The lack of PCR can be attributed to the presence of the deleterious Cu 2 Se phase within the films [18] as well as metallic phases such as In and CuIn, particularly in the K-doped film. On the other hand, the increase in the photocurrent response in the films doped with Na and Cs could be due to the catalyzed oxidation of the semiconductor surface [5] which leads to Se vacancy neutralization, a well-known recombination center in CI(G)S, and the formation of p-Cu 2 O.…”

“…100 pA). The higher conductance of the CIS:Li film is possible due to the substitutional incorporation of the Li CIS lattice, leading to an increase in the carrier concentration [18]. The I-V curve of the Na-doped film shows an extended, well-defined rectifying behavior up to 3000 mV and a current injection from the contacts above 3000 mV.…”