Annealing treatment of Cu(In,Ga)Se2 absorbers prepared by sputtering a quaternary target for 13.5% conversion efficiency device

Ouyang, Liangqi; Zhao, Ming; Zhuang, Daming; Han, Junfeng; Gao, Zhan; Li, Guo; Li, Xiaolong; Sun, Rujun; Cao, Mingjie

doi:10.1016/j.solener.2015.05.019

Cited by 25 publications

(8 citation statements)

References 27 publications

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“…After ultrasound-H 2 O 2 and ultrasound-O 3 treatments, the CIGS diffraction peaks of the P-type absorption layer were retained, which are derived from the CuIn x Ga 1– x Se 2 phase. According to the JCPDS card data of CuGa 0.6 In 0.4 Se 2 (#35-1101) and CuGa 0.3 In 0.7 Se 2 (#35-1102), the XRD pattern indicated the occurrence of diffraction peaks of (112), (220/204), and (312/116), which is well matched with the CIGS phase. , The composition of the decapsulated CIGS layer is consistent with the newly synthesized CIGS layer reported in other studies. , It can be inferred that ROS and ultrasound treatment will not change the CIGS crystal structure of the absorbed layer. The strong (110) peak of Mo is observed in the spectrum, which is related to the Mo electrical back contact .…”

Section: Resultsmentioning

confidence: 94%

“…The XRD spectrum is shown in Figure S8 The composition of the decapsulated CIGS layer is consistent with the newly synthesized CIGS layer reported in other studies. 39,40 It can be inferred that ROS and ultrasound treatment will not change the CIGS crystal structure of the absorbed layer. The strong (110) peak of Mo is observed in the spectrum, which is related to the Mo electrical back contact.…”

Section: Analysis Of Decapsulating Productsmentioning

confidence: 99%

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A Novel Combined Technology of Rich Reactive Oxygen Species and Ultrasound for the Decapsulation of Waste Cu(InGa)Se₂ Solar Cells

Huang

Lin

et al. 2023

ACS Sustainable Chem. Eng.

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The rapidly developing Cu(InGa)Se2 solar cells will face a large amount of scrapping in the next 5–10 years. Waste Cu(InGa)Se2 solar cells are rich in metal and organic resources. Decapsulation is the key step for resource recovery. However, there is a lack of environmentally friendly and efficient decapsulating method. In this study, a combined technology of rich reactive oxygen species and ultrasound was proposed for decapsulating waste Cu(InGa)Se2 solar cells. Ethylene-vinyl acetate, polyethylene terephthalate, and cell layer can be completely separated after 6 h ultrasound-O3 (10 g/h) or 4 h ultrasound-H2O2 (30 wt %) treatment. Under the attack of reactive oxygen species, C–O and C–C bonds in ethylene-vinyl acetate fractured. Structures including −CH3, crosslinking bridge, vinyl acetate side chain, and alkane chain were destroyed. The crosslinked ethylene-vinyl acetate network was damaged, resulting in the adhesion loss. Long-chain and cyclic ketones, esters, and alkane were mainly generated, which are non-toxic natural substances and even have a high value. The O3-ultrasound method can continuously generate reactive oxygen species, excessive O3 can spontaneously decompose into O2, and the solutions can be reused. This study might be the first time to propose the rich reactive oxygen species and ultrasound combined technology for decapsulating waste Cu(InGa)Se2 solar cells, which contributes to the environmentally friendly recovery.

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Section: Resultsmentioning

confidence: 94%

Section: Analysis Of Decapsulating Productsmentioning

confidence: 99%

A Novel Combined Technology of Rich Reactive Oxygen Species and Ultrasound for the Decapsulation of Waste Cu(InGa)Se₂ Solar Cells

Huang

Lin

et al. 2023

ACS Sustainable Chem. Eng.

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show abstract

“…Ayachi et al [24] observed additional (400) and (332) peaks after annealing the samples at 540 • C. Similar additional peaks were observed by Liang et al [30] and [32] for substrate temperatures during the deposition ranging from 500 to 550 • C. Results presented in this paper reveal observation of above mentioned peaks for lower substrate temperature (400 • C) under 1.53 Pa of pressure (Table 3). From the studies of Ouyang et al [33], the dependency of the average grain size on annealing temperature can be found. Moreover, the grain size depends not only on the temperature but also on other parameters, such as GGI ratio, sputtering pressure, and power [34].…”

Section: Discussionmentioning

confidence: 99%

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Gulkowski

Krawczak

2020

Coatings

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Thin film Cu(In,Ga)Se2 (CIGS)-based solar cells with relatively high efficiency and low material usage might become a promising alternative for crystalline silicon technology. The most challenging task nowadays is to decrease the PV module fabrication costs by application of easily scalable industrial process. One of the possible solutions is the usage of magnetron sputtering system for deposition of all structures applied in CIGS-based photovoltaic device. The main object of these studies was fabrication and characterization of thin films deposited by sputtering technique. Structural and electrical properties of the sputtered films were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray Powder Diffraction (XRD), and four-point probe resistivity measurements. The presented findings revealed technological parameters for which sheet resistance of molybdenum (Mo) back contact decreased up to 0.3 Ω/□ and to even 0.08 Ω/□ in case of aluminum layer. EDS analysis provided evidence for the appropriate stoichiometry of CIGS absorber (with CGI and GGI equal to 0.96 and 0.2, respectively). XRD characterization confirmed high-quality chalcopyrite polycrystalline structure of Cu(In,Ga)Se2 film fabricated at relatively low substrate temperature of 400 °C. Characteristic XRD peaks of hexagonal-oriented structures of sputtered CdS and i-ZnO layers were noticed.

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“…Furthermore, post-selenization (sulfurization) using H 2 Se (H 2 S) is another issue due to its high toxicity. To relieve these issues, a one-step sputtering process directly from a quaternary CIGSe target without post-selenization has been proposed to be an effective approach due to its simplicity for large-scale mass production, easy composition control, and excellent film uniformity. − One of the major challenges for the one-step sputtering process is the Se content in CIGSe films, because the process is carried out without excess Se supply. The efficiency of one-step-sputtered Se-poor CIGSe films can be improved by introducing extra Na, which reduces the amounts of V Se by forming O Se as well as In Cu by forming Na Cu ; after introducing another alkali metal K, the efficiency of 14.1% without post-selenization has been demonstrated .…”

Section: Introductionmentioning

confidence: 99%

Engineering a Ga-Gradient by One-Step Sputtering to Achieve Over 15% Efficiency of Cu(In,Ga)Se₂ Flexible Solar Cells without Post-selenization

Wang

Huang

et al. 2020

ACS Appl. Mater. Interfaces

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A one-step sputtering process using a quaternary target has been demonstrated to be a simple route to form Cu(In,Ga)Se2 (CIGSe) absorber without post-selenization; however, the lack of a Ga-grading structure in the CIGSe absorber confines its efficiency. Here, we demonstrate a one-step cosputtering process to control the Ga profile in the CIGSe absorber on flexible stainless steel substrates. Special attention was paid to the formation of second phases and their effects on the cell performance. Although the normal Ga-grading and efficiency enhancement could be achieved by cosputtering of CIGSe and Ga2Se3 targets, high-energy ion bombardment during the sputtering process might cause the decomposition of the Ga2Se3 target, leading to the formation of Ga2O3 in the CIGSe absorber, which gradually degraded the device performance. We replaced the Ga2Se3 target with a stoichiometric CuGaSe2 target for cosputtering, which can further enhance the cell efficiency due to the elimination of Ga2O3. However, when the Ga content at the back side of CIGSe is further increased by raising the deposition power of the CuGaSe2 target, the phase separation of CuGaSe2 may take place, resulting in the formation of Cu2–X Se and CuGaSe2 at the back side of the CIGSe absorber; therefore, the recombination at the back side is increased. By cosputtering a CIGSe target with a Cu-deficient CuGaSe2 target, we can suppress the formation of second phases and achieve designable normal grading, leading to the highest efficiency of 15.63% without post-selenization on flexible substrates.

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Annealing treatment of Cu(In,Ga)Se2 absorbers prepared by sputtering a quaternary target for 13.5% conversion efficiency device

Cited by 25 publications

References 27 publications

A Novel Combined Technology of Rich Reactive Oxygen Species and Ultrasound for the Decapsulation of Waste Cu(InGa)Se₂ Solar Cells

A Novel Combined Technology of Rich Reactive Oxygen Species and Ultrasound for the Decapsulation of Waste Cu(InGa)Se₂ Solar Cells

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Engineering a Ga-Gradient by One-Step Sputtering to Achieve Over 15% Efficiency of Cu(In,Ga)Se₂ Flexible Solar Cells without Post-selenization

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Annealing treatment of Cu(In,Ga)Se2 absorbers prepared by sputtering a quaternary target for 13.5% conversion efficiency device

Cited by 25 publications

References 27 publications

A Novel Combined Technology of Rich Reactive Oxygen Species and Ultrasound for the Decapsulation of Waste Cu(InGa)Se2 Solar Cells

A Novel Combined Technology of Rich Reactive Oxygen Species and Ultrasound for the Decapsulation of Waste Cu(InGa)Se2 Solar Cells

RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Engineering a Ga-Gradient by One-Step Sputtering to Achieve Over 15% Efficiency of Cu(In,Ga)Se2 Flexible Solar Cells without Post-selenization

Contact Info

Product

Resources

About

A Novel Combined Technology of Rich Reactive Oxygen Species and Ultrasound for the Decapsulation of Waste Cu(InGa)Se₂ Solar Cells

A Novel Combined Technology of Rich Reactive Oxygen Species and Ultrasound for the Decapsulation of Waste Cu(InGa)Se₂ Solar Cells

Engineering a Ga-Gradient by One-Step Sputtering to Achieve Over 15% Efficiency of Cu(In,Ga)Se₂ Flexible Solar Cells without Post-selenization