Effects of resonant-laser excitation on the emission properties in a single quantum dot

Abstract

Gazzano, O.; Huber, T.; Loo, V.; Polyakov, S.; Flagg, E.B.; and Solomon, G.S., "Effects of resonant-laser excitation on the emission properties in a single quantum dot" (2018). Faculty Scholarship. 1560.While many solid-state emitters can be optically excited non-resonantly, resonant excitation is necessary for many quantum information protocols as it often maximizes the non-classicality of the emitted light. Here, we study the resonance fluorescence in a solid-state system-a quantum dot-with the addition of weak, non-resonant light. In the inelastic scattering regime, changes in the resonance fluorescence intensity and linewidth are linked to both the nonresonant and resonant laser powers. Details of the intensity change indicate that charge-carrier loss from the quantum dot is resonant laser. As we enter the Mollow triplet regime, this resonant laser loss term rate is approximately 1∕50 ns −1 . This work further clarifies resonance fluorescence in solid-state systems and will aid in the further improvement of solid-state non-classical light sources.OCIS codes: (300.6280) Spectroscopy, fluorescence and luminescence; (250.5590) Quantum-well, -wire and -dot devices.

Charging Dynamics of Single InGaAs Quantum Dots under Resonant Excitation

“…Thus, Auger recombination is responsible for the fast, normal exponential decay. This conclusion is consistent with other experiments that have measured time-dependent charge state dynamics 11,14 . The values of α 1 in Fig.…”

Wigner Time Delay Induced by a Single Quantum Dot

“…We resonantly excite our sample which is mounted inside a helium flow cryostat at 5 K using a tunable CW diode laser. In addition, the sample is illuminated through the same beam path by a low intensity (< 100 pW) non-resonant diode laser (λ = 785 nm) to fill adjacent charge traps, thus narrowing the QD emission linewidth and stabilizing the fluorescence signal [22,23]. Using a microscope objective (NA=0.65) the collimated, linearly polarized laser beam is focused on to the sample to a diffraction limited spot size of approximately 1 µm.…”

Resonance fluorescence of a single semiconductor quantum dot: the impact of a fluctuating electrostatic environment

“…In terms of line broadening, the additional NR laser leads to narrower RF lines when the defect occupation is frozen 33,44 . The linewidth decreases exponentially with He-Ne power 90 and gets close to the radiative limit but the RF line shape can still be a Gaussian, suggesting the presence of some remaining spectral wandering. We will discuss in the next section the frequency dependent read-out of the RF since it gives valuable information about the characteristic time scales on which charge noise occurs.…”

“…Therefore, the increase of the RF intensity under the additional NR laser excitation, depends only on the intra-dot charge occupancy. Many groups have reported an increased brightness of the RF that can reach one order of magnitude 7,33,61,74,84,90 . Figure 6 illustrates the typical situations of RF quenching and regain described above.…”