Effects of RF Power on Electrical and Structural Properties of Sputtered SnO₂:Sb Thin Films

Abstract

In this work, antimony doped tin oxide (SnO2:Sb) thin lms were fabricated using a radio frequency magnetron sputtering system on Si wafer and glass substrates. The base pressure in the sputtering chamber was 1.0 Pa. The SnO2:Sb thin lms were deposited for 1.0 h in a mixture of Ar and O2 environment with O2/Ar ratio of 10/90 at 75, 100, and 125 W RF sputtering powers. The microstructure of SnO2:Sb thin lms was assessed using a eld emission scanning electron microscopy. The crystallographic structure of the sample was determined by X-ray diraction. The average surface roughness (Ra) was measured with atomic force microscopy. The electrical resistivity of the deposited lms was measured by the four-point-probe method. The thicknesses of the lms were measured by surface proler.