Effects of scaling on muon-induced soft errors

Sierawski, Brian D.; Reed, Robert A.; Mendenhall, Marcus H.; Weller, Robert A.; Schrimpf, Ronald D.; Wen, Shi-Jie; Wong, Richard; Tam, Nelson; Baumann, R.

doi:10.1109/irps.2011.5784484

Cited by 66 publications

(51 citation statements)

References 29 publications

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“…As previously, atmospheric radiation fields were calculated by using ATMORAD. Table V describes the main technological model parameters that were used [26], [27]; i.e., the elementary cell surface (S cell ), the critical charge to provoke a SEU (Q crit ) and the nominal power supply (V CC).…”

Section: Ser Predictions By the Musca-sepmentioning

confidence: 99%

SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons

Clemente

Hubert

Fraire

et al. 2018

IEEE Trans. Nucl. Sci.

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Abstract-This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for SRAM power supplies ranging from 0.5 V to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform (MUSCA-SEP 3 ). Large-scale SELs and SEFIs, observed in the 90-nm and 130-nm SRAMs respectively, are also presented and discussed.

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Section: Ser Predictions By the Musca-sepmentioning

confidence: 99%

SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons

Clemente

Hubert

Fraire

et al. 2018

IEEE Trans. Nucl. Sci.

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“…Particles with an LET value of 0.1 deposit approximately 0.001 pC/um of charge The fact that the SRAM cell was upsetting e values of deposited charge indicates a very lo for the SRAM cell. Specifically, these SRA vulnerable to upsets due to muons, low-ene high-energy electrons [5][6][7]. If the SRAM these particles is confirmed, it may significa FIT rates for terrestrial operations.…”

Section: Resultsmentioning

confidence: 96%

Multi-cell soft errors at the 16-nm FinFET technology node

Tam

Bhuva

Massengill

et al. 2015

2015 IEEE International Reliability Physics Symposium

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“…refers to. Sierawski et al, [9] estimated that typical Q crit for a 45 nm technology are in the range 0.21 -0.71 fC (ground level; terrestrial environment). Fig.…”

Section: Resultsmentioning

confidence: 99%