Effects of Si on electromigration of Al–Cu–Si/TiN layered metallization

Abstract

This work investigates eleetromigration (EM) in Al-l wt %Si, AI-l wt %Si~O.5 wt % Cu and AI-0.5 wt % eu films with TiN barrier metals. The EM resistance of the AI-O.5 wi % eu layered metallization was found to be higher than that of the AI-J wt % Si~O.5 wt % Cu layered metallization. The electromigration test results show that the reaction between Al films and underlying TiN layer degrades the electromigration performance of the Al-l wt % Si, Al-l wt % Si-O.5 wt % Cu films. The reaction kinetics between Al alloys and TiN layers was studied by transmission electron microscopy and by investigating the resistance rise mechanism. Si was found to enhance thin intermctallic compound formation between the Al alloys and TiN on samples annealed at 450°C. 143 J.