Effects of SnSe2 secondary phases on the efficiency of Cu2ZnSn(Sx,Se1−x)4 based solar cells

Temgoua, Solange; Bodeux, Romain; Naghavi, Negar; Delbos, Sébastien

doi:10.1016/j.tsf.2014.10.058

Cited by 41 publications

(31 citation statements)

References 16 publications

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“…Regarding the origin of the degradation of the Voc, it has been reported that the presence of SnSe 2 within CZTSSe introduces shunting in the devices decreasing the Voc. 76 This effect can also be observed in our SLG samples. Figure S3 shows that the reduction in the Voc observed at low temperatures/high SnSe 2 contents is strongly related to a lower shunt resistance (Rsh).…”

Section: Discussionsupporting

confidence: 75%

“…The duration of the annealing was the same at both temperatures so the energy supplied to the sample was directly related to the annealing temperature. What is more, Temgoua et al fabricated CZTSSe devices at 600°C for different annealing times and observed the formation of SnSe 2 from 1‐ to 30‐minute annealings that vanished for longer annealing times . In this case, the amount of energy supplied to the samples was proportional to the duration of the annealing.…”

Section: Discussionsupporting

confidence: 66%

“…Regarding the origin of the degradation of the Voc, it has been reported that the presence of SnSe 2 within CZTSSe introduces shunting in the devices decreasing the Voc . This effect can also be observed in our SLG samples.…”

Section: Discussionmentioning

confidence: 99%

“…What is more, Temgoua et al fabricated CZTSSe devices at 600°C for different annealing times and observed the formation of SnSe 2 from 1-to 30-minute annealings that vanished for longer annealing times. 76 In this case, the amount of energy supplied to the samples was proportional to the duration of the annealing.…”

Section: Discussionmentioning

confidence: 99%

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CZTSe solar cells developed on polymer substrates: Effects of low‐temperature processing

Becerril‐Romero

Acebo

Oliva

et al. 2017

Progress in Photovoltaics

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Cu2ZnSn(S1−xSex)4 solar cells are well suited for roll‐to‐roll mass production since they are formed mainly by non‐toxic and earth‐abundant elements. Polyimide (PI) has proved to be a promising roll‐to‐roll compatible substrate yielding very high efficiency devices for Cu(In,Ga)Se2. In this work, we demonstrate the feasibility of using PI as a low‐weight and flexible alternative to soda‐lime glass for Cu2ZnSnSe4 (CZTSe) solar cells. Two main concerns arise when working with PI. Firstly, its low thermal robustness limits process temperatures below 500°C. The second concern is the lack of alkali in PI in contrast to conventional soda‐lime glass fundamental for high efficiency devices. This work tackles both issues. First, different alkali doping strategies are investigated for the incorporation of Na and K into CZTSe absorbers prepared on PI substrates by sequential precursor sputtering and selenization at 470°C: pre‐absorber synthesis and post‐deposition treatment. Post‐deposition treatment does not lead to an improvement of performance. Pre‐absorber synthesis effectively dopes the CZTSe absorbers increasing the solar cell performance and carrier concentration of the devices. Cu2ZnSnSe4 devices are then fabricated on glass and PI at different temperatures (450°C‐490°C). A detrimental SnSe2 secondary phase is detected in most of these devices. The formation of this phase is proved to be strongly related to process temperature. Despite this, a 6.4% efficiency device is achieved at 490°C on glass. Finally, through further experimentation and the addition of a Ge nanolayer, we report a 4.9% efficiency flexible device on PI setting a new record for kesterite solar cells on a polymer substrate.

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Section: Discussionsupporting

confidence: 75%

Section: Discussionsupporting

confidence: 66%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

See 2 more Smart Citations

CZTSe solar cells developed on polymer substrates: Effects of low‐temperature processing

Becerril‐Romero

Acebo

Oliva

et al. 2017

Progress in Photovoltaics

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“…44 A red-shift of the maxima of the CL spectra can be observed as the signal originates from the middle of the film (1 μm) toward the top surface of the film. This demonstrates the influence of the compositional gradient on the optoelectronic properties of the absorber layer (Figure 6b) Figure 6b.…”

mentioning

confidence: 98%

Chemistry and Dynamics of Ge in Kesterite: Toward Band-Gap-Graded Absorbers

et al. 2017

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The selenization of metallic Cu−Zn−Sn−Ge precursors is a promising route for the fabrication of low-cost and efficient kesterite thin-film solar cells. Nowadays, efficiencies of kesterite solar cells are still below 13%. For Cu(In,Ga)Se 2 solar cells, the formation of compositional gradients along the depth of the absorber layer has been demonstrated to be a key requirement for producing thin-film solar cells with conversion efficiencies above the 22% level. No clear understanding has been reached so far about how to produce these gradients in an efficient manner for kesterite compounds, but among the possible candidates, Ge arises as one of the most promising ones. In the present work, we evaluate the potential of incorporating Ge in Cu 2 ZnSnSe 4 to produce compositional gradients in kesterites. Synchrotron-based in situ energydispersive X-ray diffraction and X-ray fluorescence have been used to study the selenization of Cu−Zn−Sn−Ge metallic precursors. We propose a reaction mechanism for the incorporation of Ge atoms into the kesterite lattice after the formation of Cu 2 ZnSnSe 4 . Electron microscopy reveals that the annealing process leads to Cu 2 Zn(Sn,Ge)Se 4 absorber layers with an increase of Ge content toward the back contact with independence of the original location of Ge in the precursor layer. The effect of the Ge gradient on the optoelectronic properties of the absorber layer has been evaluated with room-temperature cathodoluminescence. The implications of the results for the development of kesterite solar cells are discussed, with the aim of encouraging new synthesis routes for compositionally graded absorbers.

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8.2% pure selenide kesterite thin‐film solar cells from large‐area electrodeposited precursors

Vauche

Risch

Sánchez

et al. 2015

Progress in Photovoltaics

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International audienceCu2ZnSnSe4 solar cell absorbers are synthesized by large-area electrodeposition of metal stack precursors followed by selenization. A champion solar cell exhibits 8.2% power conversion efficiency, a new record for Cu2ZnSnSe4 solar cells prepared from electrodeposited metallic precursors. Significant improvements of device performance are achieved by the application of two etching procedures and buffer layer optimization. These results validate electrodeposition as a credible alternative to vacuum processes (sputtering, co-evaporation) for earth-abundant thin-film solar cell fabrication at low cost. Copyright (C) 2015 John Wiley & Sons, Ltd

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Effects of SnSe2 secondary phases on the efficiency of Cu2ZnSn(Sx,Se1−x)4 based solar cells

Cited by 41 publications

References 16 publications

CZTSe solar cells developed on polymer substrates: Effects of low‐temperature processing

CZTSe solar cells developed on polymer substrates: Effects of low‐temperature processing

Chemistry and Dynamics of Ge in Kesterite: Toward Band-Gap-Graded Absorbers

8.2% pure selenide kesterite thin‐film solar cells from large‐area electrodeposited precursors

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