2022
DOI: 10.1016/j.vacuum.2022.111206
|View full text |Cite
|
Sign up to set email alerts
|

Effects of sputtering induced artifacts on the determination of diffusion coefficient: Application to Ni/Cu system

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

1
0
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 53 publications
1
0
0
Order By: Relevance
“…According to the results obtained, both diffusion coefficients are in the range 10 −17 -10 −18 cm 2 /s, but Cu in Ni diffusivity coefficient is higher than the Ni in Cu one. In order of magnitude, our data are in good agreement with the data reported by Lian et al [46], where the Hall-Morabito method was also applied. Moreover, the authors proved that this method has good accuracy for the case of thin films and the influence of sputtering artefacts can be neglected.…”
Section: Discussionsupporting
confidence: 92%
“…According to the results obtained, both diffusion coefficients are in the range 10 −17 -10 −18 cm 2 /s, but Cu in Ni diffusivity coefficient is higher than the Ni in Cu one. In order of magnitude, our data are in good agreement with the data reported by Lian et al [46], where the Hall-Morabito method was also applied. Moreover, the authors proved that this method has good accuracy for the case of thin films and the influence of sputtering artefacts can be neglected.…”
Section: Discussionsupporting
confidence: 92%