Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition

Kim, Minho; Do, Young-Gu; Kang, Hyon Chol; Noh, Do Young; Park, Seong-Ju

doi:10.1063/1.1412824

Cited by 131 publications

(75 citation statements)

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“…113%) [5,7,[10][11][12][13]. Due to a large lattice mismatch, a high density of threading dislocations on the order of (10 9 -10 10 cm −2 ) exists in the GaN film on silicon substrates, which significantly affects the performance of the GaN based devices [8].…”

Section: Introductionmentioning

confidence: 99%

“…Due to a large lattice mismatch, a high density of threading dislocations on the order of (10 9 -10 10 cm −2 ) exists in the GaN film on silicon substrates, which significantly affects the performance of the GaN based devices [8]. In order to obtain crack-free highquality GaN film on Si substrate, various types of buffer layers and growth conditions as well as post-growth heat treatment processes have been proposed by different research groups [10][11][12][13][14][15][16][17]. However, the appearance of the cracks is quite random on the film, which produces significant difficulty in device applications.…”

Section: Introductionmentioning

confidence: 99%

“…However, the appearance of the cracks is quite random on the film, which produces significant difficulty in device applications. Therefore, the control of crack distribution for a large area film is the main issue of the present study [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

et al. 2008

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In the present paper, the effect of in-situ substrate nitridation time on crystalline quality of GaN films grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD) were investigated. A thin buffer layer of silicon nitride (SiN x ) with various thicknesses was achieved through the nitridation of substrate at different nitiridation times ranging from 0 to 660 s. The structural characteristics, such as dislocation densities, correlation lengths of columnar crystallites, the tilt and twist of the mosaic structure, and the angles of rotational disorder, were all studied in detail by using a planar and cross-sectional view of high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (HRXRD) performed at different scattering geometries. It was found that the dislocation densities, lateral coherence lengths, vertical coherence lengths, and the tilt and

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

et al. 2008

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“…113%) between the GaN and the Si bring out the problems in the growth of GaN films on a Si wafer such as cracking in the epitaxial layer [5,7,[10][11][12]. Also large lattice mismatch causes high density of threading dislocations on the order of (10 9 cm −2 -10 10 cm −2 ) in the GaN film on silicon substrates, which significantly limits the performance of GaN based devices [8].…”

Section: Introductionmentioning

confidence: 99%

“…Also large lattice mismatch causes high density of threading dislocations on the order of (10 9 cm −2 -10 10 cm −2 ) in the GaN film on silicon substrates, which significantly limits the performance of GaN based devices [8]. Different research groups have proposed various types of growth conditions and buffer layers as well as post-growth heat treatment processes in order to obtain crack-free high-quality GaN film on Si substrate [10][11][12][13][14][15][16]. But, the appearance of the cracks is quite random on the film, which produces significant difficulty in device applications.…”

Section: Introductionmentioning

confidence: 99%

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers

Arslan

Duygulu

Kaya

et al. 2009

Superlattices and Microstructures

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a b s t r a c tThe effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin buffer layer of silicon nitride (SiN x ) with various thicknesses was achieved through the nitridation of the substrate at different nitridation times ranging from 0 to 660 s. The surface roughness of the GaN film, which was grown on the Si substrate 10 s, exhibited a root mean square (RMS) value of 1.12 nm for the surface roughness. However, further increments in the nitridation times in turn cause increments in the surface roughness in the GaN layers. The number of threading dislocation (TD) was counted from plan-view TEM (Transmission Electron Microscopy) images. The determined density of these threading dislocations was of the order of 9 × 10 9 cm −2 . The sheet resistances of the GaN layers were measured. The average sheet resistance significantly increases from 2867 sq E. Arslan et al. / Superlattices and Microstructures 46 (2009) 846-857 847 at various nitridation times were done at a temperature range of 10-300 K. A strong band edge PL emission line, which was centered at approx. 3.453 eV along with its phonon replicas which was separated by approx. 92 meV in successive orders, was observed at 10 K. The full width at half maximum (FWHM) of this peak is approx. 14 meV, which indicates the reasonable optical quality of the GaN epilayers grown on Si substrate. At room temperature, the peak position and FWHM of this emission became 3.396 eV and 58 meV, respectively.

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GaN-Based Devices on Si

Krost¹,

Dadgar²

2002

phys. stat. sol. (a)

182

111

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Nowadays, GaN‐based devices are usually grown on sapphire or silicon‐carbide substrates. These are either insulating or very expensive and not available in large diameter. A well‐conducting low‐cost alternative is silicon also enabling the integration of optoelectronics or high‐power electronics with Si‐based electronics. The main problem limiting a fast progress of GaN growth on silicon is the thermal mismatch of GaN and Si leading to cracks even below device‐relevant layer thicknesses. In the last few years, since the first demonstration of a molecular beam epitaxy grown GaN‐based light emitting diode on Si in 1998 the activities in research of GaN on Si increased dramatically. Meanwhile, several concepts to lower stress, avoid cracks, and improve the material quality exist. Meanwhile the material quality has improved significantly and is about as good as on sapphire so that it is only a question of time until GaN‐based devices on Si come into market. This article gives a review on the latest developments in group‐III nitride growth on Si by metal organic vapor phase epitaxy.

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Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition

Cited by 131 publications

References 20 publications

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers

GaN-Based Devices on Si

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