Effects of strain on Goos–Hänchen-like shifts of graphene

Cao, Zhenzhou; Cheng, Yi; Li, Guan-Qiang

doi:10.1016/j.physb.2012.07.011

Cited by 13 publications

(17 citation statements)

References 40 publications

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“…This effect is similar to the Goos-Hänchen-like effect for transmitted electrons discussed e.g. in [10], [25], [26], [27], [28], yet there is no reflection on the barrier in our case. The reason is that our system can be mapped to the free particle model where the wave packets do not suffer from any scattering.…”

Section: Discussionsupporting

confidence: 88%

“…It is worth noticing that ω also depends on the material constants β and a that stay hidden in definition of v 11 . Contrary to the systems studied in [25], [28] where the Goos-Hänchen-like effect for transmitted electrons on strain and potential barrier was analyzed, the electrons in our model pass through the strain-induced barrier without any reflection. There is also no difference in propagation of the wave packets formed in the K and K valleys.…”

Section: Periodic Fluctuation Of Fermi Velocitymentioning

confidence: 98%

“…It is worth noticing in this context that there were discussed systems in the literature where propagation of Dirac fermions manifested analogies with the optical systems. Let us mention [10], [25], [26], [27], [28] where it was discussed the scattering of Dirac fermions on the barriers induced by strain in combination with external fields. There, the quantum analog of Goos-Hänschen effect was analyzed as well as possible valley polarization of the incoming electron beam.…”

Section: Introductionmentioning

confidence: 99%

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On the propagation of Dirac fermions in graphene with strain-induced inhomogeneous Fermi velocity

Contreras-Astorga

Jakubský

Raya

2020

J. Phys.: Condens. Matter

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We consider systems described by the two-dimensional Dirac equation where the Fermi velocity is inhomogeneous as a consequence of mechanical deformations. We show that the mechanical deformations can lead to deflection and focusing of the wave packets. The analogy with known reflectionless quantum systems is pointed out. Furthermore, with the use of the qualitative spectral analysis, we discuss how inhomogeneous strains can be used to create waveguides for valley polarized transport of partially dispersionless wave packets.arXiv:1912.00675v1 [cond-mat.mes-hall]

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Section: Discussionsupporting

confidence: 88%

Section: Periodic Fluctuation Of Fermi Velocitymentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

On the propagation of Dirac fermions in graphene with strain-induced inhomogeneous Fermi velocity

Contreras-Astorga

Jakubský

Raya

2020

J. Phys.: Condens. Matter

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“…The GH shift plays a functional role in various fields of science such as micro-optics and * Corresponding author: Hamid.R.Hamedi@gmail.com nano-optics, acoustics, quantum and plasma physics [25], and in optical heterodyne sensors, which are employed to measure refractive index, displacement, temperature, beam angle, and film thickness [26]. Different structures are employed to explore the GH shift, such as photonic crystals [27], lossless dielectric slab [28], various-level configuration systems [29][30][31][32][33][34][35], negative refractive media [36], graphene [37][38][39][40][41], the ballistic electrons in semiconductor quantum slabs or wells [42,43], and so on [44][45][46][47][48][49][50][51][52][53]. For instance, Zubairy et al [29,30] presented proposals to manipulate the Goos-Hänchen shift of a light beam via coherent control field, which is injected into a cavity configuration containing the two-level, three-level, or four-level atoms with EIT.…”

Section: Introductionmentioning

confidence: 99%

Manipulation of Goos-Hänchen shifts in the atomic configuration of mercury via interacting dark-state resonances

2014

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We study the manipulation of Goos-Hänchen (GH) shifts for the reflected and transmitted probe light pulses injected into a cavity containing four-level configuration mercury atoms where the probe transition is in the ultraviolet (UV) region with a wavelength of 253.7 nm. Different behaviors of the GH shifts can be observed in the absence, or presence, of two driving fields as well as an incoherent pump field. When neither coherent driving fields nor incoherent pumping is turned on, we realize negative reflected GH shifts for anomalous dispersion. Including only one driving field leads to subluminal-based light propagation with positive lateral shifts at certain incident angles. Taking into account the impact of both driving fields, negative GH shifts reappear in the reflected part of the incident light. The origin of this defect is attributed to interacting double dark resonances due to a high-resolution absorption peaks with a very steep negative slope of dispersion in the susceptibility profile. We then show that one can surpass this defect by applying a weak incoherent pumping field to obtain positive GH shifts for both reflected and transmitted light beams. Finally, using the 6 1 P 1 ↔ 6 1 S 0 transition of Hg, we generalize our study to the case where the wavelength of the probe transition is 185 nm which is in the vacuum-ultraviolet domain. Although the number of oscillations is now increased, however, similar results are reported with respect to the case of UV transition.

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“…A different but relevant line is electronic GH shift in graphene [50,51,52,53,54,55,56,57,58]. The first experimental fabrication of monolayer graphene [59,60], the graphitic sheet of one-atom thickness, has inspired many interesting and new concepts on Dirac electron optics to design graphene-based electron wave devices [61].…”

Section: Introductionmentioning

confidence: 99%

Electronic analogy of Goos-Hänchen effect: a review

Chen,

Lu,

Ban

et al. 2013

Preprint

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The analogies between optical and electronic Goos-Hänchen effects are established based on electron wave optics in semiconductor or graphene-based nanostructures. In this paper, we give a brief overview of the progress achieved so far in the field of electronic Goos-Hänchen shifts, and show the relevant optical analogies. In particular, we present several theoretical results on the giant positive and negative Goos-Hänchen shifts in various semiconductor or graphen-based nanostructures, their controllability, and potential applications in electronic devices, e.g. spin (or valley) beam splitters.

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Effects of strain on Goos–Hänchen-like shifts of graphene

Cited by 13 publications

References 40 publications

On the propagation of Dirac fermions in graphene with strain-induced inhomogeneous Fermi velocity

On the propagation of Dirac fermions in graphene with strain-induced inhomogeneous Fermi velocity

Manipulation of Goos-Hänchen shifts in the atomic configuration of mercury via interacting dark-state resonances

Electronic analogy of Goos-Hänchen effect: a review

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