1987
DOI: 10.1016/0040-6090(87)90196-9
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Effects of substrate bias on the resistivity and microstructure of molybdenum and molybdenum silicide films

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Cited by 23 publications
(11 citation statements)
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“…The observed reduction in the films thickness could be the reason for the decrease in the intensity of the peaks and increase in the tensile strain with increase in the substrate bias. [19,23,24], but the crystallite size of our films is much smaller than those reported earlier. The electrical transport properties of the films were studied using a commercial 10 mK dilution refrigerator.…”
Section: Resultscontrasting
confidence: 73%
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“…The observed reduction in the films thickness could be the reason for the decrease in the intensity of the peaks and increase in the tensile strain with increase in the substrate bias. [19,23,24], but the crystallite size of our films is much smaller than those reported earlier. The electrical transport properties of the films were studied using a commercial 10 mK dilution refrigerator.…”
Section: Resultscontrasting
confidence: 73%
“…The resistivity of our films is much lesser than the values reported (~ 40-80 -cm) for the Mo films with comparable or larger crystallite sizes [8,27,30]. The effect of oxygen contamination during the film growth upon its electrical properties is well documented [12,19,20]. The reduced sheet resistance and resistivity of the films in present work could be attributed to lesser oxygen contamination due to increase in the deposition rate and repulsion of negative oxygen ions away from the growing films [20].…”
Section: Resultsmentioning
confidence: 75%
“…Based on the previously discussed SEM cross‐sectional images, Mo grains were approximated as evenly spaced, parallel square columns with the grain width ( d s ) and the film thickness ( h ) having values of 50 and 680 nm, respectively. Based on transmission electron microscopy measurements of Mo films performed by other groups, a value of 3 nm was used for the grain boundary width ( δ ) . Lastly, the accumulation of Na is confined on the surface within a layer of fixed thickness δ s .…”
Section: Resultsmentioning
confidence: 99%
“…Because of its low resistivity and high melting point, sputterdeposited thin films of molybdenum (Mo) are increasingly being used as the gate electrode in GaAs-based metal gate field effect transistors (MESFETs) and silicon-based metal-oxidesemiconductor (MOS) devices [2,4,5,9]. Successful performance of Mo as the gate electrode was found to be affected by the deposition conditions.…”
Section: Introductionmentioning
confidence: 99%
“…Successful performance of Mo as the gate electrode was found to be affected by the deposition conditions. Lin et al [5] deposited pure Mo films on steam-oxidized Si wafers by DC magnetron sputtering in argon plasma. He reported that the resistivity of Mo films shows a pronounced decrease with an increase in the negative substrate bias and the rate of film growth.…”
Section: Introductionmentioning
confidence: 99%