Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN J. Appl. Phys. 111, 053535 (2012) Ferroelectric domain structures of 0.4-μm-thick Pb(Zr,Ti)O3 films prepared by polyvinylpyrrolidone-assisted SolGel method J. Appl. Phys. 111, 054109 (2012) Columnar grain growth of FePt (L10) Cobalt ferrite thin films were grown on SiO 2 / Si͑100͒ substrates using pulsed-laser deposition technique at substrate temperatures ranging from 250 to 600°C. Thermal expansion mismatch between the film and substrate appears to have a substantial effect on the magnetic properties of the cobalt ferrite films, due to the large magnetoelastic coupling of cobalt ferrite. It was shown in this study, that polycrystalline films with ͑111͒-preferred orientation could be prepared at substrate temperatures as low as 250°C. The growth of crystalline cobalt ferrite films at such low temperatures indicates the potential to use cobalt ferrite for microelectromechanical systems devices and sensor applications including integration with a wider range of multilayer device structures.