Effects of substrate temperature on structural and electrical properties of cubic silicon carbide films deposited by hot wire chemical vapor deposition technique

Fabrication of an ultra‐thick‐oriented 3C‐SiC coating on the inner surface of a graphite tube by high‐frequency induction‐heated halide chemical vapor deposition

“…From 200 to 350 mm, two broader features between 200 and 500/cm were also observed in the overlapping of the transverse acoustic (TA) and the longitudinal acoustic (LA) of the pseudo‐α‐SiC, respectively . In addition, features between 500 and 600/cm originated from the amorphous silicon (a‐Si) TO mode (520/cm) . The band peaks at 1350 and 1580/cm corresponded to graphite's D band and G band .…”

“…A graphite peak at 26.2° was observed in the 150‐200 mm section, indicating the presence of excess carbon in the coating due to the lower temperature. Due to a large number of planar defects, a small shoulder at the lower 2θ side of the (111) peak was observed in all of the XRD patterns …”

Toward mid-infrared nonlinear optics applications of silicon carbide microdisks engineered by lateral under-etching [Invited]

“…To achieve Q factors of at least 10 6 that are required for Kerr frequency comb generation, further improvements in epitaxial growth methods and fabrication process are considered to minimize the losses. These optimizations include the use of a pseudo-Si layer to decrease the mismatch at the SiC/Si interface [47], optimizing the gas and temperature [48] during the CVD process, or even switching to amorphous SiC, completely compatible to our needs, that shows a lower n 2 but higher Q factors [49]. In the end, wedge-shaped structures will also be investigated, as they provide a better control of the dispersion as well as a reduction of the scattering losses [50].…”