Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Hua, Mengyuan; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Zhaofu; Chen, Kevin J.

doi:10.1109/ispsd.2019.8757600

Cited by 3 publications

(2 citation statements)

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“…It results in current collapse or degradation of R dyn-ON due to trapping in the GaN buffer [9], [10]. Many research groups have studied the dynamic performance of GaN HEMT in terms of current collapse or R dyn-ON [8], [10], the gate charge change ( Q g ) [11], and threshold voltage shift ( V th ) [12], [13] during turn-on after the device is stressed in the off-state with high drain bias. However, the effect of substrate bias stress on the dynamic performance of GaN HEMT is not explored in depth.…”

Section: Introductionmentioning

confidence: 99%

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor

Khade

Sarkar

Shanbhag

et al. 2023

IEEE J. Electron Devices Soc.

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In this paper, kink effect observed in the output characteristics of the AlInN/GaN-on-Si high electron mobility transistor (HEMT) after subjecting the Si-substrate to positive/negative bias stress has been studied. The charge distribution in the different buffer layers of the wafer in the presence of different substrate-bias stress has been discussed in detail. It is concluded that the induced kink is due to the trapping/de-trapping of charge carriers through acceptor-like deep levels present in the GaN buffer layer. TCAD simulations have been performed to understand the electric-field distribution within the device layers, which is strongly related to the observed kink phenomenon. Two types of traps, acceptor-like (E a1 = 0.52 eV) and donor-like (E a2 = 0.44 eV), were extracted from temperature-dependent drain current transient analysis using back-gating experiment. It is concluded that a carbon-induced deep acceptor-like trap is responsible for the observed kink effect.INDEX TERMS AlInN/GaN-on-Si HEMTs, kink effect, Si-substrate stress, buffer traps, drain current transient.

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Section: Introductionmentioning

confidence: 99%

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor

Khade

Sarkar

Shanbhag

et al. 2023

IEEE J. Electron Devices Soc.

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“…Accordingly, the substrate termination, i.e. floating or grounding, leads to a difference in leakage and trapping behaviors [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Effects of substrate termination on R _on increase under stress in 650 V GaN power devices

Wang²,

Huang

et al. 2021

J. Phys. D: Appl. Phys.

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Buffer related electron trapping and hot electron injection are responsible for R on degradation in devices, but the effects of substrate termination are still uncertain. In this work, both positive and negative substrate bias are applied to investigate the different vertical trapping mechanisms in 650 V gallium nitride (GaN) power devices. R on shows an instant and significant increase under vertical bias stress, and the magnitude of downward buffer electron trapping induced R on increase is relatively larger than that induced by upward trapping. Additionally, the substrate floated and grounded GaN devices are also submitted to both off-state and semi-on-state stresses to investigate the effects of substrate termination on hot electron injection induced R on increase. The intensity of the upward electron trapping increases faster with temperature resulting in a higher R on increase than the downward situation. The hot electron effect is only obvious when the substrate is grounded, suggesting that the main injection destination is not in the buffer. The substrate floated device exhibits a lower R on increase after both off-state and semi-on-state stresses at elevated temperatures. Substrate floated packages are suggested to ensure reliable dynamic performance of device, especially for high voltage application design.

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Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications

Ťapajna

2020

Crystals

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GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented performance in terms of power, frequency, and efficiency. Application of metal-insulator-semiconductor (MIS) gate structure has enabled further development of these devices by improving the gate leakage characteristics, gate controllability, and stability, and offered several approaches to achieve E-mode operation desired for switching devices. Yet, bias-temperature instabilities (BTI) in GaN MIS transistors represent one of the major concerns. This paper reviews BTI in D- and E-mode GaN MISHEMTs and fully recess-gate E-mode devices (MISFETs). Special attention is given to discussion of existing models describing the defects distribution in the GaN-based MIS gate structures as well as related trapping mechanisms responsible for threshold voltage instabilities. Selected technological approaches for improving the dielectric/III-N interfaces and techniques for BTI investigation in GaN MISHEMTs and MISFETs are also outlined.

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Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Cited by 3 publications

References 24 publications

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor

Effects of substrate termination on R _on increase under stress in 650 V GaN power devices

Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications

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Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Cited by 3 publications

References 24 publications

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor

Effects of substrate termination on R on increase under stress in 650 V GaN power devices

Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications

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Effects of substrate termination on R _on increase under stress in 650 V GaN power devices