Effects of sulfurization temperature on Cu₂ZnSnS₄thin film deposited by single source thermal evaporation method

Abstract

In this study, the effects of sulfurization temperature on the properties of thermally evaporated Cu 2 ZnSnS 4 (CZTS) thin films were investigated. Molybdenum (Mo) coated soda lime glass (SLG) was used as substrates and stoichiometric CZTS powder (99.95%) was used as the source material. XRD patterns showed that CZTS were formed with preferential orientations of (112) > (220) > (312) for all the investigated films. The intensity of (112) peak is found increasing until a certain temperature indicating that the highest degree of crystallinity is achieved together with secondary phases such as ZnS and SnS. It was confirmed by raman shift at 338 cm %1 from Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed a trend for surface roughness as well as morphology. From Hall effect measurement, all deposited films exhibited p-type conductivity. From UV-vis spectroscopy measurement, the optical band gap of all the films are found in the range of potential absorbers for CZTS based thin film solar cells.

Simulation study to find suitable dopants of CdS buffer layer for CZTS solar cell

“…CZTS is a quaternary semiconductor with non-toxic earth abundant constituent material. It exhibits excellent photovoltaic properties such as absorption coefficient above 10 4 cm −1 and direct bandgap of 1.4-1.6 eV [9,10]. The maximum reported efficiency of CZTS solar cell is ~ 11% [11].…”

Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In2O3 Layer in CZTS Top Cell

“…The surface recombination velocity is of 1 × 10 7 cm s −1 . Parameters p-CZTS [32,33,34] n-CdS [35,36] n-In 2 O 3 [37] n-ZnO [38] p ++ Si [39] n ++ Si [39] p-Si [39] p + Si [39] Thickness The electrical connections to the front and back surfaces are done with two metal contact features.…”

Numerical Simulation of an Improved CZTS/WS2 PV Cell by SCAPS 1-D

“…It exhibits photovoltaic properties like CIGS and CdTe. It has an absorption coefficient above 10 4 cm -1 and direct band gap ranges from 1.4 to 1.6 eV [10][11]. For the buffer layer of CZTS solar cell many researchers are using CdS, ZnS and CdZnS [12].…”