Effects of sulfurization temperature on CZTS thin film solar cell performances

Phase-transition-driven growth of compound semiconductor crystals from ordered metastable nanorods

“…When heating with a fast heating rate (above 2.6 K s -1 ), which leads to formation of larger grains, the films show increased conductivity, with an average of 2.5 ×10 -2 Ω -1 cm -1 (average from 14 samples). This value is comparable with conductivities observed for CZTS films prepared by sulfurization of metallic precursors [39], which is an approved method for fabrication of CZTS solar cells [40][41][42]. Above a heating rate of 2.6 K s -1 no systematic dependency on the heating rate could be observed.…”

Effects of Sulfurization Pressure on the Conversion Efficiency of Cosputtered Cu2ZnSnS4Thin Film Solar Cells

“…CZTS has a small parameter window within which to bring about a thermodynamically stable phase [22]. A very small variation in the sulfurization parameters favors the formation of secondary phases such as Cu 2 SnS 3 , ZnS, SnS 2 , and Cu 2 S and consequently CZTS films have been investigated extensively with regard to the source of the sulfur [23,24], sulfurization time [25,26], sulfurization temperature [27,28], and sulfur partial pressure [29,30]. However, few reports are available on the effect of pressure during sulfurization, which has an important influence on the quality of CZTS film and also affects the formation of a MoS 2 layer at the interface between the CZTS and Mo.…”

Optimization of Cu2ZnSnS4 Absorber Layers via Sulfurization of Electrodeposited Cu-Zn-Sn Precursors for Photovoltaic Applications

“…The most common annealing or sulfurization temperature range is between 500 and 600 °C for CZTS based devices, where large, uniform crystal grains are obtained [125,[141][142][143].…”

“…Temperature increase is reported to change the grain morphology and enhance the crystallinity of CZTS [141][142][143]. Emrani et al reported on the influence of sulfurization temperature for sputtered Sn/Zn/Cu precursors using structure analyses and solar cell efficiency [142].…”

“…Emrani et al reported on the influence of sulfurization temperature for sputtered Sn/Zn/Cu precursors using structure analyses and solar cell efficiency [142]. The grain size of CZTS is reported to be the largest and smoothest at 515 °C, however the highest efficiency is reported for the 550 °C sample [142]. Another high efficiency (8%) CZTS material, obtained from electrodeposited metallic precursor, shows best performance after sulfurization at 590 °C [125].…”