Effects of surface potential fluctuations on DLTS of MOS structure

Özder, Serhat; Atilgan, Ismail; Katircioglu, B.

doi:10.1016/0038-1101(95)00122-0

Cited by 8 publications

(10 citation statements)

References 12 publications

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“…During the fill pulse it is also possible to drive the MIS device into accumulation, with the formation of a majority carrier layer on the surface. These effects will change the transient operation of the device after the fill pulse, and can be useful for the measurement of surface states, something that has been thoroughly described in the literature [17][18][19][20].…”

Section: Simulation Of Dlts Spectra On Mis Structuresmentioning

confidence: 99%

“…Early results using MIS devices for DLTS analysis mainly focused on probing interface states, pulsing the device into accumulation or inversion. Just a few years after Lang first described the basis of DLTS [1], several studies were published that applied the technique to insulator-based devices [18][19][20][21][22][23]. The first report by Wang et al [17] used IGFETs to measure only interface traps, with a theoretical discussion on the procedure, which was further improved by Schulz et al [18], and Özder et al [19,20] in Si MOS structures.…”

Section: Introductionmentioning

confidence: 99%

“…Just a few years after Lang first described the basis of DLTS [1], several studies were published that applied the technique to insulator-based devices [18][19][20][21][22][23]. The first report by Wang et al [17] used IGFETs to measure only interface traps, with a theoretical discussion on the procedure, which was further improved by Schulz et al [18], and Özder et al [19,20] in Si MOS structures. The most thorough report on the measurement of bulk states instead of surface states, in MOS diodes, was published by Yamasaki et al [21].…”

Section: Introductionmentioning

confidence: 99%

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Deep-level spectroscopy in metal–insulator–semiconductor structures

Kurtz

Muñoz

Chauveau

et al. 2017

J. Phys. D: Appl. Phys.

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In this study we present a method for measuring bulk traps using deep-level spectroscopy techniques in metal–insulator–semiconductor (MIS) structures. We will focus on deep-level transient spectroscopy (DLTS), although this can be extended to deep-level optical spectroscopy (DLOS) and similar techniques. These methods require the modulation of a depletion region either from a Schottky junction or from a highly asymmetric p–n junction, junctions that may not be realizable in many current material systems. This is the case of wide-bandgap semiconductor families that present a doping asymmetry or have a high residual carrier concentration or surface carrier accumulation, such as InGaN or ZnO. By adding a thin insulating layer and forming an MIS structure this problem can be circumvented and DLTS/DLOS can be performed under certain conditions. A model for the measurement of bulk traps in MIS structures is thus presented, focusing on the similarities with standard DLTS, maintaining when possible links to existing knowledge on DLTS and related techniques. The model will be presented from an equivalent circuit point of view. The effect of the insulating layer on DLTS is evaluated by a combination of simulations and experiments, developing methods for the measurement of these type of devices. As a validation, highly doped ZnO:Ga MIS devices have been successfully characterized and compared with a reference undoped sample using the methods described in this work, obtaining the same intrinsic levels previously reported in the literature but in material doped as high as cm−3.

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Section: Simulation Of Dlts Spectra On Mis Structuresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Deep-level spectroscopy in metal–insulator–semiconductor structures

Kurtz

Muñoz

Chauveau

et al. 2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Lang first described the basis of DLTS [68], several studies came out applying the technique to insulator-based devices [18][19][20][21][22][23]. The first report by Wang et al [147] used IGFETs to measure only interface traps, with a theoretical discussion on the procedure, which was further improved by Schulz et al [123], andÖzder et al [104,105] in Si MOS structures. The most thorough report on the measurement of bulk states instead of surface states, in MOS diodes, was published by Yamasaki et al [152].…”

Section: Chapter 3 Deep Level Spectroscopy In Metal-insulator-semicomentioning

confidence: 99%

“…These effects will change the transient operation of the device after the fill pulse, and can be useful for the measurement of surface states, something that has been thoroughly described in the literature [104,105,123,147]. …”

Section: Simulation Of Dlts Spectra On Mis Structuresmentioning

confidence: 99%