PACS 29.40.Wk Cadmium zinc telluride (CZT) is one of the most promising materials for large-volume gamma-ray spectrometers and imaging arrays. However, because of deficiencies in the high quality material, highresolution CZT spectrometers are still limited to relatively small dimensions (< 2-3 cm 3 ), which make them inefficient at detecting gamma rays. To extend the range of CZT detector applications, an increase in their efficiency is needed without sacrificing the ability to spectrally resolve gamma energies. Achieving this goal requires progress in the growth of large uniform single crystals, reductions in carrier trapping, increases in electrical resistivity, and improved device fabrication procedures. This paper summarizes the current developments in large area/volume CZT detectors and the common constraints on their designs: bulk and surface leakage currents, charge sharing and loss in multi-electrode devices, and charge transport non-uniformities. We also describe recent progress in characterization of CZT materials and devices using new capabilities at Brookhaven National Laboratory. 1 Introduction Semi-insulating crystals of cadmium zinc telluride (for zinc concentrations in the range of 0-20%) have shown great potential for the production of room temperature X-and gamma-ray detectors and imaging cameras. The combination of high efficiency and good energy resolution makes these detectors attractive for a diverse range of applications, including gamma-ray spectroscopy, nuclear safeguards, X-ray fluorescence, environmental cleanup, astronomy, bone scans, detection of tumors and other abnormalities, and diagnosis of heart disease. Thus far, the size of the detectors produced from CZT crystals has been limited to only a few cubic centimeters due to the low yield of large uniform crystals with suitable material properties. The low yields have resulted in relatively high cost for detectors, which has prevented the use of the technology in many applications. The problem of high cost is compounded by the electronic trapping in the crystals, which causes the energy resolution to be less than desired, particularly for large area/volume devices. To compensate for the carrier trapping and accompanied loss of energy resolution, single carrier devices and customized pulse-processing electronics have been developed. Although further improvements in the crystal growth are required for many large area/volume applications, the performance of CZT devices, the global capacity for growth of detectorgrade crystals, and the size of the commercial market have progressed steadily.