Effects of tantalum doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by a sol–gel method

Kao, Ming-Cheng; Chen, H.Z.; Young, San-Lin; Chuang, Bor-Nian; Jiang, Wei; Song, Jinde; Jhan, Syun-Sheng; Chiang, Jung Lung; Wu, Lin

doi:10.1016/j.jcrysgro.2011.11.033

Cited by 10 publications

(2 citation statements)

References 16 publications

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“…From XRD patterns, one can see the strongest (117) diffraction peak changes with various x values. In XRD patterns, the (117) diffraction peak is the most closely related to the ɑ‐axis orientation , and ɑ‐axis orientation is an important factor with respect to obtaining large P r . To quantify the degree of (117) orientation, we introduce the Lotgering factor f = I(117)/[I(117)+I(006)] .…”

Section: Resultsmentioning

confidence: 99%

Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi_4‐xSb_xTi₃O₁₂ thin films

Wang

Jiang

et al. 2016

Crystal Research and Technology

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O 12 (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO 2 /Si substrates by sol-gel method. The effects of various Sb 3+ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi 4-x Sb x Ti 3 O 12 (xࣔ0) thin films prefer (117) orientation. The substitution Sb 3+ for Bi 3+ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi 4-x Sb x Ti 3 O 12 films display exciting electric properties. Especially when x = 0.04, the film Bi 3.96 Sb 0.04 Ti 3 O 12 has achieved the max 2Pr value of 87μC/cm 2 . This film also has a better anti-fatigue characteristic, which can be up to 10 10 switching cycles without fatigue. The leakage current density improved with J = 8×10 −8 A/cm 2 .

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Section: Resultsmentioning

confidence: 99%

Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi_4‐xSb_xTi₃O₁₂ thin films

Wang

Jiang

et al. 2016

Crystal Research and Technology

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“…The dielectric constant of the BTO thin films prepared under the post-annealing (144.08) exceeds those as-deposited ones (61.95). This result may be attributed to the preferred orientation of (100) in the thin film prepared under post-annealing process [ 32 ]. The dielectric constant is slightly decreased as the frequency increases, which is mostly due to the grains and grain boundaries by generating electrons and doubly ionized oxygen vacancies during the post-annealing process.…”

Section: Resultsmentioning

confidence: 99%

Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

Wang

Yao

et al. 2014

Nanoscale Res Lett

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Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively.

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Electrochemical sensor for the detection of lead ions of B-site-doped bismuth titanate perovskite thin film

et al. 2019

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Effects of tantalum doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by a sol–gel method

Cited by 10 publications

References 16 publications

Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi_4‐xSb_xTi₃O₁₂ thin films

Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi_4‐xSb_xTi₃O₁₂ thin films

Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

Electrochemical sensor for the detection of lead ions of B-site-doped bismuth titanate perovskite thin film

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Effects of tantalum doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by a sol–gel method

Cited by 10 publications

References 16 publications

Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi4‐xSbxTi3O12 thin films

Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi4‐xSbxTi3O12 thin films

Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

Electrochemical sensor for the detection of lead ions of B-site-doped bismuth titanate perovskite thin film

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Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi_4‐xSb_xTi₃O₁₂ thin films

Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi_4‐xSb_xTi₃O₁₂ thin films