2013
DOI: 10.1016/j.jallcom.2013.06.146
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Effects of temperature and Mo2C layer on stress and structural properties in CVD diamond film grown on Mo foil

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Cited by 19 publications
(5 citation statements)
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“…The reason for shifting the G peak position from a low wavenumber to a higher wavenumber is the presence of compressive stress in the Ti-DLC coating. These results are consistent with those reported by Pardo et al and Long et al [ 31 , 32 ].…”
Section: Resultssupporting
confidence: 94%
“…The reason for shifting the G peak position from a low wavenumber to a higher wavenumber is the presence of compressive stress in the Ti-DLC coating. These results are consistent with those reported by Pardo et al and Long et al [ 31 , 32 ].…”
Section: Resultssupporting
confidence: 94%
“…In this case, confocal Raman spectroscopy was used to measure the stress in the catalyst layer. [ 71 ] As shown in Figure 4b,c, Raman features of Si selected from nine locations of G‐Ni 3 S x O 2− x / p‐Si all locate at 520 cm −1 , testifying its “stress‐free” state. [ 72 ] In contrast, four out of nine from the Raman spectra of Ni 3 S 2 / p‐Si redshifted by 2.5 cm –1 , indicative of a tensile stress induced in Si by the catalyst layer.…”
Section: Resultsmentioning
confidence: 99%
“…In the previous work [27], it was proposed that the shift of 500 cm − 1 band is related to the amount of doping boron in the manner that the higher the boron concentration is, the lower the wavenumber of the maximum 500 cm −1 band is. The broad band at 1500 cm −1 , which assigns to disorder graphite [19], becomes progressively weaker on both substrates as the deposition time increases. It is reasonable that a larger number of sp 2 carbon are presented in grain boundaries at its initial growth stage since the crystal size is smaller and the boundaries' density is higher compared with the film of longer deposition time.…”
Section: Characteristics Of Diamond Filmsmentioning
confidence: 95%
“…The latter would be lower than the former. Long [19] reported that the thermal stress of film can be effectively reduced when the substrate is of thin thickness, especially, approximate to that of film, and Silva [20] argued that the stress can be completely relieved by the plastic deformation of the Cu interlayer.…”
Section: Introductionmentioning
confidence: 99%