2019
DOI: 10.1109/access.2019.2901846
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Effects of Temperature and Residual Stresses on the Output Characteristics of a Piezoresistive Pressure Sensor

Abstract: The effects of temperature on the output performance of piezoresistive pressure sensors are studied in this paper. The influences of the environmental temperature, the residual stress due to the fabrication process, and the residual stress due to the packaging on the piezoresistive coefficient and resistance are theoretically investigated. The simulation results are obtained via finite element analysis through ANSYS. The results of experimental studies performed on piezoresistive pressure sensors fabricated us… Show more

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Cited by 32 publications
(24 citation statements)
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“…Further, it allows multiple what-if scenarios to be tested quickly and effectively and reduces the amount of prototype building and testing. It has therefore attracted much more attention in engineering design, manufacturing and assembly [28], [29].…”
Section: Stress Analysis Via Finite Element Methods a Stress Analmentioning
confidence: 99%
“…Further, it allows multiple what-if scenarios to be tested quickly and effectively and reduces the amount of prototype building and testing. It has therefore attracted much more attention in engineering design, manufacturing and assembly [28], [29].…”
Section: Stress Analysis Via Finite Element Methods a Stress Analmentioning
confidence: 99%
“…The observed effect that also manifests itself at a higher level of sensitivity, when pressure is applied from the topside, is kind of a "flap" of a thin stressed wafer. For elimination of the deficiency the process should be further modified to achieve the final trade-off relationship between MSs of different signs from SiO2 and Si3N4 films [42][43][44][45]. Additional application of wet stop-etching and an increase in the length of a RI edge would make it possible not only to considerably reduce a spread in sensitivity, but to minimize the existing nonlinearity errors as well.…”
Section: Output Characteristicsmentioning
confidence: 99%
“…The most influential geometric size of membrane is thickness of thinned membrane part, which will be reduced to a certain limit [2]. Subsequently, the thinned membrane part with thickness of several microns, where maximum mechanical stresses (MS) are created, is most susceptible to residual MS influence from: 1) SiO2 and Si3N4 layers, especially in case of their step distribution on top silicon surface [3,4], 2) metallization with significantly different coefficient of thermal expansion (CTE) [3][4][5][6], 3) the back surface roughness after etching [7], 4) types and methods of packaging [4,[8][9][10][11][12]. These facts lead to error increase for nonlinearity, temperature characteristics and larger scatter of output parameters (especially without stop-Journal XX (XXXX) XXXXXX M Basov 2 etching processes).…”
Section: Introductionmentioning
confidence: 99%