Effects of the annealing temperature on the structure and up-conversion photoluminescence of ZnO film

Meng, Xiaoqi; Zhao, Chong; Xu, Boxu; Wang, Pei; Liu, Juncheng

doi:10.1016/j.jmst.2018.05.018

Cited by 14 publications

(5 citation statements)

References 21 publications

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“…Besides, distinct and shallow pits turn up on the surface of the ZnO thin film. This result is comparable to the ZnO thin films annealed at 800-1000 • C by means of sol-gel method [31]. Furthermore, the cross-section SEM image indicates that the thickness of the as-received ZnO thin films on the quartz glass substrate was measured to be 102.8 nm, as shown in Figure 2c, which matches with the result (100.1 nm) detected by the profilometer.…”

Section: Resultssupporting

confidence: 83%

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

et al. 2019

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In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

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Section: Resultssupporting

confidence: 83%

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

et al. 2019

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“…Post-heat treatment is one of the factors that plays a crucial role in the structural and optical properties of the ZnO thin films through the modification of their crystallinity and surface roughness. Thermal gravimetric and differential thermal gravimetric analysis (TGA/DTA) of ZnO gelatum by Meng et al [23] showed that annealing the gel at 500 • C ensured complete removal of all the hydroxyl bonds and residues of organic matter. Chaitra et al [24] investigated the role of annealing temperature (300, 400, and 500 • C) on the structural and optical properties of sol-gel-derived ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of ZnO Thin Films Prepared by Molecular Precursor and Sol–Gel Methods

et al. 2020

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Zinc oxide (ZnO) is a versatile and inexpensive semiconductor with a wide direct band gap that has applicability in several scientific and technological fields. In this work, we report the synthesis of ZnO thin films via two simple and low-cost synthesis routes, i.e., the molecular precursor method (MPM) and the sol–gel method, which were deposited successfully on microscope glass substrates. The films were characterized for their structural and optical properties. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis (0 0 2) oriented, which is of interest for piezoelectric applications. The surface roughness derived from atomic force microscopy (AFM) analysis indicates that films prepared via MPM were relatively rough with an average roughness (Ra) of 2.73 nm compared to those prepared via the sol–gel method (Ra = 1.55 nm). Thin films prepared via MPM were more transparent than those prepared via the sol–gel method. The optical band gap of ZnO thin films obtained via the sol–gel method was 3.25 eV, which falls within the range found by other authors. However, there was a broadening of the optical band gap (3.75 eV) in thin films derived from MPM.

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“…ZnO has a wide range of optical properties such as a wide direct band gap of 3.37 eV, a high excitation binding energy (60 meV) at room temperature, high electron mobility, and thermal stability. The PL spectrum of ZnO contains ultraviolet and visible emission peaks . The UV emission band is attributed to the recombination of a hole in the valence band and an electron in the conduction band.…”

Section: Introductionmentioning

confidence: 99%

“…The PL spectrum of ZnO contains ultraviolet and visible emission peaks. 4 The UV emission band is attributed to the recombination of a hole in the valence band and an electron in the conduction band. The visible emission results from the intrinsic defects, including oxygen vacancies (V O ), a zinc vacancy (V Zn ), zinc interstitials (Zn i ), oxygen interstitials (O i ), a zinc antisite (Zn O ), and an oxygen antisite (O Zn ), in ZnO.…”

Section: Introductionmentioning

confidence: 99%

Significantly Enhanced Photoluminescence Performance of Ni_xS_y(NiS and Ni₉S₈)/ZnO Nanorods by a Hydrothermal Method

Liu

2020

Inorg. Chem.

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This paper reports on a near zero band gap semiconductor, Ni x S y , which significantly enhances the photoluminescence (PL) performance of ZnO nanorods. The structural, morphological, and optical properties of the composites were characterized by X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), ultraviolet–visible spectroscopy (UV–vis), PL spectrometry, etc. The PL patterns at an excitation wavelength (λex) of 325 nm revealed that the 10% Ni x S y /ZnO nanorod (10NZNR) composites displayed the highest emission intensity in the region of 420–630 nm. The relationship between the emission intensity of ZnO and the concentration of Ni x S y demonstrated that the PL intensity of NZNRs initially increased (<10%) and then declined with an increase in Ni x S y content (>10%). According to PL spectra at different excitation wavelengths and PL excitation (PLE) spectra, the visible emission of Ni x S y /ZnO nanorod (NZNR) composites can only be excited by light with energy greater than that of the band gap. Studies of the morphological structures and PL behaviors of NZNR composites have illustrated that Ni x S y considerably enhances the visible emission of ZnO by regulating its morphology and structure. An appropriate mechanism by which Ni x S y enhances the PL performance of ZnO has been proposed.

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Effects of the annealing temperature on the structure and up-conversion photoluminescence of ZnO film

Cited by 14 publications

References 21 publications

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Structural and Optical Properties of ZnO Thin Films Prepared by Molecular Precursor and Sol–Gel Methods

Significantly Enhanced Photoluminescence Performance of Ni_xS_y(NiS and Ni₉S₈)/ZnO Nanorods by a Hydrothermal Method

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Effects of the annealing temperature on the structure and up-conversion photoluminescence of ZnO film

Cited by 14 publications

References 21 publications

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Structural and Optical Properties of ZnO Thin Films Prepared by Molecular Precursor and Sol–Gel Methods

Significantly Enhanced Photoluminescence Performance of NixSy(NiS and Ni9S8)/ZnO Nanorods by a Hydrothermal Method

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Significantly Enhanced Photoluminescence Performance of Ni_xS_y(NiS and Ni₉S₈)/ZnO Nanorods by a Hydrothermal Method