Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Yang, Weijia; Wang, Fengming; Guan, Zeyi; He, P.; Liu, Zhihao; Hu, Linshun; Chen, Mei; Zhang, Chi; He, Xin; Fu, Yuechun

doi:10.3390/app9214509

Cited by 14 publications

(9 citation statements)

References 47 publications

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“…While, no other peaks that belong to ZnO can be seen in the XRD pattern. The similar behavior was also observed in another report that was presented by Yang et al [ 34 ] on the growth of ZnO thin films on sapphire (001) substrates. They showed that only two peaks thatcontributed to the (002) and (004) planes of ZnO were observed.…”

Section: Resultssupporting

confidence: 89%

Binder-Free Electrode Based on ZnO Nanorods Directly Grown on Aluminum Substrate for High Performance Supercapacitors

et al. 2020

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Herein, for the first time, the growth of ZnO nanorods directly on aluminum (Al) substrate via a low temperature (80 °C) wet chemical method, and used as binder-free electrode for supercapacitors were reported. XRD pattern and HRTEM images showed that high crystalline nanorods grown on Al substrate with c-axis orientation. Morphological studies revealed that the nanorods possessed well defined hexagon phase with length and diameter of ~2 µm and 100–180 nm, respectively. Raman spectrum of ZnO nanorods showed that the characteristic E2H mode corresponds to the vibration associated with the oxygen atoms of ZnO. The optical properties of ZnO nanorods studied using Room-temperature PL spectra revealed a near-band-edge (NBE) peak at ~388 nm emission and deep level (DLE) at ~507 nm. Electrochemical measurements showed that ZnO nanorods on Al substrate exhibited remarkably enhanced performance as electrode for supercapacitors with a value of specific capacitance of 394 F g−1 measured with scan rate of 20 mV s−1. This unique nanorods structures also exhibited excellent stability of >98% capacitance retention for 1000 cycles that were measured at 1A g−1. The presented easy and cost-effective method might open up the possibility for the mass production of binder-free electrodes for efficient electrochemical energy storage devices.

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Section: Resultssupporting

confidence: 89%

Binder-Free Electrode Based on ZnO Nanorods Directly Grown on Aluminum Substrate for High Performance Supercapacitors

et al. 2020

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“…The ZnO films transparency measurements for electromagnetic wavelengths from the visible light range did not show the influence of the production process temperature on their transparency (Figure 9). In the case of the tested samples, high transparency in the range of 80-90% for visible light, electromagnetic wavelengths above 400 nm was observed, which corresponds to the results achieved by earlier investigations [27,28]. Graph course for a sample deposited at a temperature of 300 • C is different from 100 • C and 200 • C. This is in line with the ellipsometer thickness results (the film produced by 300 • C is thicker than the rest) and the AFM results of the roughness parameters.…”

Section: Resultssupporting

confidence: 89%

The Influence of Magnetron Sputtering Process Temperature on ZnO Thin-Film Properties

et al. 2021

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The important research direction in surface engineering and photovoltaics is the development of new materials that can replace the previously used expensive films. A prospective compound is zinc oxide (ZnO), characterized by optical and electrical properties similar to ITO and a lower production cost. One of the key factors influencing the properties of the ZnO thin films is the technique and parameters of their production. The comprehensive investigation results of the influence of ZnO thin-films deposition process temperature on their structure, optical properties, and adhesion are presented in the paper. ZnO films were deposited by the magnetron sputtering method. The structural characteristics of the tested films were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffractometry (XRD) and Raman spectroscopy, while the optical properties of the films were studied by the UV/VIS spectroscopy. Thickness and adhesion measurements of the obtained films were performed using the spectroscopic ellipsometry technique and the scratch test, respectively. The obtained research results showed the influence of the deposition process temperature on the morphology, crystallite size and adhesion of the thin films to the substrate. The effect of process temperature on optical properties, the value of the optical bandgap and crystal structures were analyzed and described. The results of this work have a meaning for the development of surface engineering and may serve as a clue in future studies in the field of modern photovoltaic structures.

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“…The small abnormality of the scoreline is credited to the presence of excess zinc in the film . The reported Zn 2p 3/2 core-level range is 1021.24–1021.81 eV, which is associated with Zn 2+ ions . The Zn 2p 3/2 binding energy electronic states are the same as the reported value of the bulk ZnO (1021.8 eV) .…”

Section: Resultsmentioning

confidence: 60%

“…45 The reported Zn 2p 3/2 core-level range is 1021.24−1021.81 eV, which is associated with Zn 2+ ions. 46 The Zn 2p 3/2 binding energy electronic states are the same as the reported value of the bulk ZnO (1021.8 eV). 46 No metallic Zn peak was found, which confirms that Zn exists only in an oxidized state.…”

Section: Resultsmentioning

confidence: 77%

“…46 The Zn 2p 3/2 binding energy electronic states are the same as the reported value of the bulk ZnO (1021.8 eV). 46 No metallic Zn peak was found, which confirms that Zn exists only in an oxidized state. Figure 2d presents the XPS analysis of the O 1s core level and provides the information of oxygen defect or positions of presence in the ZnO thin film.…”

Section: Resultsmentioning

confidence: 77%

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Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

Khan

Saqib

Kim

et al. 2022

ACS Appl. Electron. Mater.

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The asymmetric resistive memory device can be more suitable to reduce the crosstalk effect in a crossbar array. Similarly, this work focused on the material and design concept to achieve a one-directional engineered resistive switching memory device to reduce crosstalk effect for electronic synapses. The pulsed modulated DC sputtered crystalline GaN heterojunction with ITO/ZnO Schottky diode, resulting in one-directional digital resistive switching. The DC sputtered polycrystalline GaN is used on top of the ITO/ZnO Schottky barrier to achieve asymmetric multistate resistive switching behavior. The synaptic operation helps to investigate the stable synaptic spike-rate-dependent plasticity (SRDP), spike-timing-dependent plasticity (STDP), and long-term potentiation/depression (LTP/LTD). The weight change of the device was evaluated by the Modified National Institute of Standards and Technology (MNIST) image recognition technique at the system-level neural network. The simulation part deepens the concept that an asymmetric neuromorphic device can help reduce the crosstalk effect in a crossbar array to implement AI inference applications.

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Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

Cited by 14 publications

References 47 publications

Binder-Free Electrode Based on ZnO Nanorods Directly Grown on Aluminum Substrate for High Performance Supercapacitors

Binder-Free Electrode Based on ZnO Nanorods Directly Grown on Aluminum Substrate for High Performance Supercapacitors

The Influence of Magnetron Sputtering Process Temperature on ZnO Thin-Film Properties

Asymmetric GaN/ZnO Engineered Resistive Memory Device for Electronic Synapses

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