Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Xia, Yao; Zhu, Youhua; Liu, Chunhua; Wei, Hongyuan; Zhang, Tingting; Lee, Yeeheng; Zhu, Tinggang; Wang, Meiyu; Li, Yi; Ge, Mei

doi:10.1088/2053-1591/ab96f5

Cited by 9 publications

(5 citation statements)

References 24 publications

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“…In this work Nitrogen ion implantation is used to partially block the electrons in the 2DEG region to convert the D-Mode device into an E-Mode device [49]. The conduction bandgap energy level shows whether the device is in D-Mode or E-Mode condition based on the quantum well position concerning the Fermi level.…”

Section: Resultsmentioning

confidence: 99%

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Influence of GaN Cap Layer on E-Mode AlGaN/GaN HEMT Device with Nitrogen Implanted Gate Using TCAD Simulations

Song,

Reddy,

Issac

2023

Preprint

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This study presents an optimized and novel AlGaN/GaN HEMT structure which is developed using TCAD (Technology Computer-Aided Design) simulations. The calibrated D-Mode AlGaN/GaN HEMT is converted into an E-Mode transistor using nitrogen implantation and the device optimization is achieved by changing the thickness of the GaN cap layer. With the increase of GaN cap layer thickness from 0nm to 2nm the device achieved an increment in the breakdown voltage from 159V to 720V and drain current from 1.11×10− 05 A/mm to 1.99×10− 02 A/mm. The large Ids of the HEMT with GaN cap layer are attributed to the increase of the concentration of two-dimensional electron gas (2DEG). The leakage current is reduced from 1.07×10− 08 A/mm to 5.35×10− 11 A/mm thereby increasing the device performance with the use of the GaN cap layer. The shift in Vth, bandgap, and an increase of Electron Density is also observed by altering the GaN cap thickness from 0nm to 2nm. The current gain of the 2nm GaN cap device is shown with an increase in gate voltage ramping (Vgs).

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Section: Resultsmentioning

confidence: 99%

“…The GaN cap layer helps to enhance channel mobility by scattering channel electrons. Device breakdown voltage can be improved by reducing the peak electric eld at the drain side with the help of the GaN cap layer [42][43][44][45][46][47][48][49].…”

Section: Introductionmentioning

confidence: 99%

Influence of GaN Cap Layer on E-Mode AlGaN/GaN HEMT Device with Nitrogen Implanted Gate Using TCAD Simulations

Song,

Reddy,

Issac

2023

Preprint

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“…The impact of introducing a thin Aluminum Nitride spacer layer is also investigated [25]. Aluminum Nitride spacer layer induced to the simultaneous progress in electron density and mobility as well offers performance of the transistor [26]- [27] in positive manner.…”

Section: J Effect Of Variation In Aluminum Nitride Nucleation Layermentioning

confidence: 99%

Improvement of AlGaN/ GaN based HEMT with high performance rate for integrated circuit design for wide range of applications

Jadhav,

Bakar Khan

2024

JICS

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In the current research work, we focused on the design and analysis of a semiconductor device called High-Elec-tron-Mobility Transistor (HEMT) based on the AlGaN/GaN material system. An Aluminum Nitride spacer,Layer of Nucle-ation along with cap as a AlGaN and barrier of GaN with the channel of AlGaN are incorporated to enhance HEMT device performance.The electrical characteristics of the proposed HEMT are an-alyzed. The Drain Current is found to be 0.18A/mm, indicating the device's ability to handle high current levels. The Electron Concentration is observed to have a maximum value of -96.12electrons/cm3 and varying based on the position in the channel for GaN Barrier thickness is 0.15mm. In the analysis of AC such as Gain of the Maximum Unilateral Power is deter-mined to be 83.41dB, indicating the ability of the device to am-plify signals. The Y-parameters, which characterize the de-vice's behavior at various frequencies of operation, are also de-termined. The capacitance between the electrode region Gate-Source (CGSMIN) is found to be 1.70×10^-11 F/mm, and alike The Capacitance between the electrode region the Gate-Drain Ca-pacitance (CGDMIN) is determined to be 4.7×10^-12 F/mm. Fur-thermore, an Electric Field of 96.51×10^3 V/mm is observed, in-dicating the strength of the electric field across the device. For HEMT device the simulation,The TCAD Silvaco software is be-ing practiced.

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“…Several experimental studies have reported the suitability of an in situ SiN x cap layer for preventing the formation of meandering channels, which improves device reliability [10,15]. The in situ SiN x cap layer is used to passivate the surface to suppress the barrier relaxation and neutralize the surface state charge, resulting in a higher 2DEG density [10,11,[15][16][17]. While the concept of an in situ SiN x cap layer seems promising, the realization of in situ SiN x is challenging and demands careful optimization of growth techniques, as both the composition and thickness can affect long-term 2DEG stability [17].…”

Section: Introductionmentioning

confidence: 99%

Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

Sehra

Anand

Saraswat

et al. 2023

J. Phys. D: Appl. Phys.

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This work investigates the thin barrier InAlN/GaN HEMTs for high power applications through TCAD simulations. To begin with, the TCAD simulations were first calibrated with the in – house fabricated InAlN HEMT sample for both DC and Pulsed characteristics. The thin barrier InAlN/GaN HEMTs shows a large leakage current through the gate electrode due to a high gate injection which severely degrades the breakdown characteristics of the device and thus acts as a bottleneck for high power applications. To improve the 2DEG confinement and to consequently reduce the bulk leakage, back – barrier technique is used. The resistive GaN buffer is replaced with AlGaN back – barrier which improves the breakdown characteristics at the cost of output power density. Thus, to scale up the output power density, and further optimize the breakdown characteristics, a Π – shaped Gate is introduced to limit the gate leakage current through the InAlN barrier by virtue of its improved hot electron reliability. Coupled with the AlGaN back – barrier, the Π – Gate significantly improves the breakdown characteristics for achieving high output power densities, albeit with minor trade – offs to the device gain. To elucidate the compatibility towards high power applications, all the device architectures are dynamically characterized by Pulsed IV simulations and the trap related dispersive effects are investigated. Amongst all, the Π – shaped Gate coupled with the AlGaN back – barrier outperforms the conventional architectures by exercising superior electrostatic control over the channel and exhibiting a high linearity for high power mm – Wave applications.

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Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Cited by 9 publications

References 24 publications

Influence of GaN Cap Layer on E-Mode AlGaN/GaN HEMT Device with Nitrogen Implanted Gate Using TCAD Simulations

Influence of GaN Cap Layer on E-Mode AlGaN/GaN HEMT Device with Nitrogen Implanted Gate Using TCAD Simulations

Improvement of AlGaN/ GaN based HEMT with high performance rate for integrated circuit design for wide range of applications

Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

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