Effects of the compensation level on the carrier lifetime of crystalline silicon

Dubois, Sébastien; Enjalbert, N.; Garandet, J.P.

doi:10.1063/1.2961030

Cited by 58 publications

(35 citation statements)

References 10 publications

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“…This illustrates well the positive outcome of compensation on carrier lifetime before lightinduced degradation, which was previously reported and analyzed by several groups [30][31][32].…”

Section: Doping and Lifetime Profilesmentioning

confidence: 51%

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Forster¹,

Wagner

Degoulange³

et al. 2014

Solar Energy Materials and Solar Cells

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Abstract:This paper deals with the impact of dopant compensation on the degradation of carrier lifetime and solar cells performance due to the boron-oxygen defect. The boron-oxygen defect density evaluated by lifetime measurements before and after degradation is systematically found proportional to the total boron concentration, showing that compensation cannot reduce light-induced degradation. This result is confirmed by a comparison of upgraded-metallurgical grade silicon solar cells having identical boron, oxygen and carbon but different compensation levels and in which the degradation is found more severe when the compensation is stronger.

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“…This illustrates well the positive outcome of compensation on carrier lifetime before lightinduced degradation, which was previously reported and analyzed by several groups [30][31][32].…”

Section: Doping and Lifetime Profilesmentioning

confidence: 51%

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Forster¹,

Wagner

Degoulange³

et al. 2014

Solar Energy Materials and Solar Cells

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“…It is interesting to note that L Diff becomes very important close to these n-type areas, where K is almost unity. This could be related to a decrease in the recombination strength of TD associated with high K [10]. The existence of n-Si clearly evidences a strong degree of non-uniformity in the dopant distributions in the studied wafer.…”

Section: Electronic Disorder In Compensated Simentioning

confidence: 90%

“…This technique is appropriate to study the electronic disorder since it enables high resolution mappings of L Diff which depends on τ and the minority carrier mobility (µ min ) that both determine the local transport properties (L Diff =(µ min τ) 0.5 ). As µ min and τ are functions of N A and N D in compensated Si [10], L Diff mappings can give indirect indications about the dopant distributions. For this measurement, a 300nm-thick Al layer was deposited by evaporation on the back surface and annealed at 450 °C during 30 min to create an ohmic contact.…”

Section: Contributedmentioning

confidence: 99%

Hall mobility drops in disordered boron‐doped Czochralski silicon compensated by thermal donors activation

Veirman

Dubois

Enjalbert

et al. 2010

Phys. Status Solidi (c)

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Eine besonders effiziente Unterstellung von auskragenden Decken und Randunterzügen stellen Modulgerüste dar. Dabei gibt es keine verbindliche Faustformel für die optimale Unterstellung. Wenngleich eine Abstimmung auf die spezifischen Baustellenbedingungen hier natürlich unabdingbar ist, gibt es doch eine übliche Variante zur sicheren Ableitung von Lastkonzentrationen am Deckenrand und zum zugleich sicheren Arbeiten an der Fassade. Sie besteht in der Montage eines Arbeits‐ und Traggerüstes, das nach und nach aufgestockt und über alle Etagen durchgestützt wird. Diese Methode findet im mehrgeschossigen Wohnungsbau etwa für auskragende Balkonplatten oder Laubengänge ihre Anwendung. (Siehe Beitrag S. A 4 ff) (Foto: Harsco Infrastructure)

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“…Recently, carrier lifetime studies in compensated multicrystalline [1] and monocrystalline Czochralski-grown silicon [2,3] have been presented. Ref.…”

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confidence: 99%

Carrier mobilities in multicrystalline silicon wafers made from UMG‐Si

Lim

Wolf

Schmidt

2010

Phys. Status Solidi (c)

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We investigate majority‐ and minority‐carrier mobilities in multicrystalline silicon (mc‐Si) made from upgraded metallurgical‐grade (UMG) feedstock. Since UMG‐Si contains high amounts of both boron and phosphorus, a decrease of the carrier mobility due to increased scattering at ionized impurities is expected. Minority‐carrier mobilities are determined by measuring effective carrier lifetimes τeff on as‐cut wafers, where τeff is limited by carrier diffusion to the unpassivated surfaces. By examining a wafer cut vertically from the mc‐Si ingot, we indeed find a reduction in minority‐carrier mobility μmin with increasing dopant density. In addition, we find a further strong reduction of μmin in the transition region from p ‐ to n ‐type silicon. Similar results are obtained regarding the majority‐carrier mobility μmaj, which is investigated by combining measurements of the resistivity ρ and the equilibrium hole concentration p0 (equilibrium electron concentration n0 in n ‐type material) obtained from electrochemical capacitance‐voltage measurements. Apart from an overall reduction in μmaj compared to values measured in non‐compensated p ‐type mc‐Si, an additional pronounced decrease of the mobility with increasing compensation level is observed. This additional reduction can be explained by reduced screening of the ionized scattering centers. We propose a parameterization of the experimental data based on the Brooks‐Herring equation and find excellent agreement between the two (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Effects of the compensation level on the carrier lifetime of crystalline silicon

Abstract: Influence of substitutional metallic impurities on the performances of p -type crystalline silicon solar cells: The case of gold Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon Appl.

Cited by 58 publications

References 10 publications

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Hall mobility drops in disordered boron‐doped Czochralski silicon compensated by thermal donors activation

Carrier mobilities in multicrystalline silicon wafers made from UMG‐Si

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