Hall mobility drops in disordered boron‐doped Czochralski silicon compensated by thermal donors activation

et al. 2013

IEEE J. Photovoltaics

Self Cite

In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room-temperature are shown to be the majoritydopant concentration, its ionization energy and type and the compensation level. We show that both the majority-and the minority-carrier mobilities are lower in compensated Si than expected by Klaassen's model and that the discrepancy increases with the compensation level at room-T. The study of the Tdependence of the majority-carrier mobility shows that there is no compensation-specific mechanism and that the reduction of the screening in compensated Si cannot explain alone the observed gap between experimental and theoretical mobility.

Section: Introductionsupporting

confidence: 83%

Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon

Forster

Rougieux

et al. 2013

IEEE J. Photovoltaics

Self Cite

“…Calculation shows that, in the co-doped sample shown in Fig. 2 (a) C l increases from 21 at 300K up to 3×10 4 at 80K (Fig. 3).…”

Section: A Majority-carrier Densitymentioning

confidence: 90%

Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

Forster¹,

Rougieux

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2

et al. 2012

Self Cite

In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room temperature are shown to be the majority-dopant concentration, its ionization energy and type, and the compensation level. We show that both the majority-and the minority-carrier mobilities are lower in compensated Si than expected by Klaassen's model and that the discrepancy increases with the compensation level at room temperature. The study of the temperature dependence of the majority-carrier mobility shows that there is no compensationspecific mechanism and that the reduction of the screening in compensated Si cannot explain alone the observed gap between experimental and theoretical mobility.

“…Another hypothesis that has been formulated to explain the reduction of l h in compensated Si attributes it to a reduction of the screening of ionized impurities by free carriers 14,33,34 due to their lower concentration. Although such screening is taken into account by Klaassen's model, its impact on the collision cross-section could be underestimated.…”

Section: Impact Of Compensation On the Carrier Mobilitymentioning

confidence: 99%

Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon

Forster

Journal of Applied Physics

Fourmond

et al. 2012

Self Cite

About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors J. Appl. Phys. 110, 114903 (2011) Silicon nanocrystals doped with substitutional or interstitial manganese Appl. Phys. Lett. 99, 193108 (2011) Effect of tin doping on oxygen-and carbon-related defects in Czochralski silicon J. Appl. Phys. 110, 093507 (2011) Ion-beam mixing in crystalline and amorphous germanium isotope multilayers This paper investigates the importance of incomplete ionization of dopants in compensated p-type Si and its impact on the majority-carrier density and mobility and thus on the resistivity. Both theoretical calculations and temperature-dependent Hall-effect measurements demonstrate that the carrier density is more strongly affected by incomplete ionization in compensated Si than in uncompensated Si with the same net doping. The previously suggested existence of a compensation-specific scattering mechanism to explain the reduction of mobility in compensated Si is shown not to be consistent with the T-dependence of the measured carrier mobility. The experiment also shows that, in the vicinity of 300 K, the resistivity of compensated Si has a much weaker dependence on temperature than that of uncompensated silicon.