“…For example, it is common practice when dealing with compensated Si to consider the majority-carrier density as equal to the net doping (N A -N D in p-type and N D -N A in n-type) which is equivalent to consider all dopants to be ionized. In a recent paper [1], we used numerical solution of the Poisson equation and Hall experimental data to demonstrate that neglecting Manuscript received June 5, 2012; revised July 16, 2012; accepted July 17, 2012. M. Forster is with Apollon Solar, Lyon 69002, France, with INL-INSA de Lyon, Villeurbanne 69621, France, and also with the Australian National University, Canberra, A.C.T. 0200, Australia (e-mail: forster@apollonsolar.com).…”