2003
DOI: 10.1140/epjb/e2003-00107-6
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Effects of the indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique

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Cited by 31 publications
(22 citation statements)
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“…In particular, cadmium selenide (CdSe) compounds have become quite interesting for solar cells, photodetection and optoelectronic applications [1][2]. It is also used in fabrication of photoelectrochemical cells, non-linear optics, gas sensors, photoconductors, thin film transistors, gamma ray detectors, large screen liquid crystal display, etc.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, cadmium selenide (CdSe) compounds have become quite interesting for solar cells, photodetection and optoelectronic applications [1][2]. It is also used in fabrication of photoelectrochemical cells, non-linear optics, gas sensors, photoconductors, thin film transistors, gamma ray detectors, large screen liquid crystal display, etc.…”
Section: Introductionmentioning
confidence: 99%
“…Doping induces a large free carrier density in the bands and a high density of ionized dopant ions which results in variation in the density of states with respect to the undoped case and the formation of band tails [29]. There are several experimental methods which are being used to estimate the energy band gap.…”
Section: Resultsmentioning
confidence: 99%
“…It has also been found that microstructure and the stoichiometry of CdS-Se thin films were extremely sensitive to its element component ratios where selenium does as donor impurities [4]. Thin films of the ternary CdSxSe 1_x compositions can be synthesized by different techniques; such as thermal evaporation technique [5], chemical bath deposition (CBD) technique [6], laser ablation technique [7] and chemical spray pyrolysis thin films of the ternary chalcogenide compound of CdS 0.1 Se 0.9 have been prepared by thermal evaporation where the physical properties were studied as a function of the film thickness [8].…”
Section: Introductionmentioning
confidence: 99%