Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates

Abstract

We have studied the influence of matrix materials on the self-organization of InAs nanostructures grown on InP substrates by molecular-beam epitaxy. Our results show that InAs quantum dots are formed on InAlGaAs, whereas quantum-wire-like structures are produced on InAlAs and InGaAs. Tuning from vertical anticorrelation in InAs/InAlAs superlattices to vertical correlation in InAs/InGaAs and InAs/InAlGaAs superlattices is observed, which is explained by the size effects in the nanostructure–nanostructure interaction.

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

“…[http://dx.doi.org/10.1063/1.4966997] Self-assembled InAs quantum dashes (QDashes), epitaxially grown on an InP(001) substrate, resemble quantum dots (QDs), however, strongly elongated in one of the in-plane dimensions. [1][2][3][4] So far, such QDashes have been exploited mostly as a gain medium in semiconductor lasers, amplifiers, or superluminescent diodes suited for telecom technology operating at 1.3 and 1.55 lm low-loss spectral windows of silica fibers. 5-7 Recent research promises possible applications of QDashes in long-haul secure quantum data transmission lines.…”

“…[1][2][3][4] So far, such QDashes have been exploited mostly as a gain medium in semiconductor lasers, amplifiers, or superluminescent diodes suited for telecom technology operating at 1.3 and 1.55 lm low-loss spectral windows of silica fibers. [5][6][7] Recent research promises possible applications of QDashes in long-haul secure quantum data transmission lines.…”

Strain relaxation and stress-driven interdiffusion in InAs∕InGaAs∕InP nanowires

“…7 However, InAs NW's on InGaAs/ InP have already been reported. 5 In our case, we observe that the shape and direction of the NW's on the surface depends on the buffer layer thickness, suggesting the role of a volumetric effect. This effect could be attributed to different elastic properties of InGaAs and InP films.…”

“…1 In particular, InP-based InAs nanostructures are also interesting for their ability to work as light emitters in the 1.30-1.60 m long-wavelength region. [2][3][4][5][6][7] In contrast to the InAs/ GaAs system, the formation process of InAs nanostructures on InP substrates is characterized by the lower strain ͑ϳ3.2% ͒ between InAs and the buffer layers, and complicated by possible chemical alloying with the substrate, 2,3 anisotropic stress relaxation, 7 and the large number of possible materials for the buffer layer. [2][3][4][5][6][7] Experimental results suggest that stress relaxation 7 and/or the chemical composition 4 of the buffer layer ͑InP, InAlAs, or InGaAs͒ have key roles in configuring the final shape of the InAs nanostructures.…”

Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

“…[12][13][14] Several compounds were used as buffer layers to investigate the growth of InAs QDs (or other nanostructures) on InP substrates, such as InP, 15) InAlAs, 16) InGaAs, 17) InGaAsP, 18) and InGaAlAs. [19][20][21] We want to highlight the difference in some properties of QDs grown on the two substrate orientations, the more widely used (100) orientation and the (311)B orientation. The deposition of InAs QDs on such buffer layers on InP(311)B leads to QD sizes that are approximately two times smaller than QDs grown on InP (100) substrates.…”