Effects of the optical energy bandgap and metal work function on the contact resistivity in a-SiGe : H

Han, Sang Youn; Cho, Byeonghoon; Takeuchi, Noboru

doi:10.1088/0022-3727/47/7/075104

Cited by 1 publication

(3 citation statements)

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“…The energy band gap was measured using electron energy loss spectroscopy (EELS) and the energy difference between E F and E v was observed by X-ray photoelectron spectroscopy (XPS). 29,30 III. RESULTS AND DISCUSSION Figure 1 shows the comparative evolutions of transfer current− voltage (I−V) curves in a-Si:H TFT under the same negative gate bias-stress (V gs = −25 V, V ds = 10 V, T = 60°C) with only different light intensity conditions (6000 vs 400 000 cd/cm 2 ).…”

Section: Methodsmentioning

confidence: 99%

“…The energy band gap was measured using electron energy loss spectroscopy (EELS) and the energy difference between E F and E v was observed by X-ray photoelectron spectroscopy (XPS). 29,30…”

Section: Methodsmentioning

confidence: 99%

“…The bias stress was applied for 3 h and monitored for behavior of threshold voltage with time in the photo states. The energy band gap was measured using electron energy loss spectroscopy (EELS) and the energy difference between E F and E v was observed by X-ray photoelectron spectroscopy (XPS). , …”

Section: Experimental Proceduresmentioning

confidence: 99%

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Abnormal Behavior of Threshold Voltage Shift in Bias-Stressed a-Si:H Thin Film Transistor under Extremely High Intensity Illumination

Han

Park

Kim

et al. 2015

ACS Appl. Mater. Interfaces

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We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to positive gate bias direction after ∼30 min of bias stress even when the negative gate bias stress is applied under high intensity illumination (>400 000 Cd/cm(2)), which has not been observed in low intensity (∼6000 Cd/cm(2)). This behavior is more pronounced in a low work function gate metal structure (Al: 4.1-4.3 eV), compared to the high work function of Cu (4.5-5.1 eV). Also this is mainly observed in shorter wavelength of high photon energy illumination. However, this behavior is effectively prohibited by embedding the high energy band gap (∼8.6 eV) of SiOx in the gate insulator layer. These imply that this behavior could be originated from the injection of electrons from gate electrode, transported and trapped in the electron trap sites of the SiNx/a-Si:H interface, which causes the shift of threshold voltage toward positive gate bias direction. The results reported here can be applicable to the large-sized outdoor displays which are usually exposed to the extremely high intensity illumination.

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Section: Methodsmentioning

confidence: 99%

“…The energy band gap was measured using electron energy loss spectroscopy (EELS) and the energy difference between E F and E v was observed by X-ray photoelectron spectroscopy (XPS). 29,30…”

Section: Methodsmentioning

confidence: 99%