Effects of the passivation of SiN  with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in Al Ga1−N/GaN heterostructures

Wang, M.J.; Shen, Bo; Xu, Fujun; Wang, Y.; Xu, Jun; Huang, Shaoyun; Zhi‐Jian, Yang; Qin, Zhixin; Zhang, G.Y.

doi:10.1016/j.physleta.2007.04.082

Cited by 11 publications

(7 citation statements)

References 24 publications

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“…Indeed, several works have found bulk traps with analogous activation energies in AlGaN/GaN HEMTs [10,37]. For completeness, in figure 6 we have plotted with blue lines the values of τ 2 obtained from the fittings to equation (5), and with dashed black lines the values of τ peak resulting from equation 4, combining the values of τ 1 and τ 2 obtained from their respective fittings. As observed, the agreement found with the experimental data is quite satisfactory in the three SSDs under analysis, what supports our interpretation of the results.…”

Section: Impedance Measurementsmentioning

confidence: 92%

“…If we assume that apart from the surface traps characterized by τ 1 , a second kind of traps with a relaxation time τ 2 is present in our devices, at each temperature τ peak should obey 4, from the experimental τ peak and the values of τ 1 obtained from the fittings to equation (3). The lines are the fittings of the data so obtained to equation (5).…”

Section: Impedance Measurementsmentioning

confidence: 99%

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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

et al. 2020

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The zero-bias microwave detection capability of self-switching diodes (SSDs) based on AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured responsivity shows an anomalous enhancement at low temperature, while the detected voltage exhibits a roll-off in frequency, which can be attributed to the presence of surface and bulk traps. To gain a deep insight into this behavior, a systematic DC and AC characterization of the diodes has been carried out in the mentioned temperature range. DC results confirm the existence of traps and AC measurements allow us to identify their properties. In particular, impedance studies enable to distinguish two types of traps: at the lateral surfaces of the channel, with a wide spread of relaxation times, and in the bulk.

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Section: Impedance Measurementsmentioning

confidence: 92%

Section: Impedance Measurementsmentioning

confidence: 99%

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

et al. 2020

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“…Effective surface passivation is necessary to eliminate surface traps that otherwise hamper device parameters like two dimensional electron gas (2DEG) concentration and mobility, and for that purpose silicon nitride, SiN x , is often employed [8][9][10][11] . Thereby SiN x grows in an amorphous phase resulting in broken interface bonds that can create interface states 12,13 .…”

Section: Contactless Electroreflectance Studies Coupled With Numericamentioning

confidence: 99%

SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

Janicki

Keller

et al. 2020

Sci Rep

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built-in electric field, and (2) a decrease in backbarrier doping that reduces the 2DEG density while leaving the potential well intact that attracts carriers from surface states. Methods Sample growth. All samples investigated in this study were grown by metal-organic chemical vapour deposition (MOCVD). C-plane sapphire substrates with 4° misorientation towards sapphire-a-plane were used to achieve smooth N-polar (Al,Ga)N films 4. A 1.4 μm thick semi-insulating (S.I.) GaN base layer was first deposited using the procedure reported previously. For all samples, the backbarrier layer consisted of a 20 nm thick graded Al x Ga 1−x N layer with x = 0.05 → 0.38 and a 10 nm thick Al 0.38 Ga 0.62 N film, followed by a 0.7 nm thick AlN interlayer, a GaN channel layer with thickness varying from 9 to 20 nm, a 0 or 2.6 nm thick Al 0.46 Ga 0.54 N cap layer, and a 0 or 5 nm thick in-situ SiN x film. The graded Al x Ga 1−x N layers were doped with Si to achieve n-type doping of 4 × 10 18 cm −2 (1st and 2nd series) or 5 × 10 18 cm −2 (3rd series). The SiN x film was grown at 1,030 °C using disilane and ammonia flows of 4.46 μmol/min and 268 mmol/min, respectively. 2DEG concentration measurements. Van der Pauw Hall measurements with indium contacts were performed at room temperature to determine the carrier concentrations. Contactless electroreflectance measurements. For CER measurements the samples were mounted in a capacitor with a half-transparent top electrode made from a copper-wire mesh. An air gap of ~ 0.5 mm was kept between the sample surface and the top electrode. An alternating voltage of ~ 3 kV provided the band bending modulation. Other relevant details on CER can be found in Refs. 32,33. Calculations. A commercial package nextnano++ was used for band profile and carrier concentration calculations 34 that provides solutions for coupled Schrödinger-Poisson equations.

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“…When a bias voltage is applied across these structures, the combination of the interfacial passivation layer, depletion layer, and series resistance shares the applied voltage. In this respect, the interfacial passivation layer thickness, frequency, and temperature can influence the electrical and dielectric behavior of these structures [1,2,12,[14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…Many studies have been conducted in recent years in order to investigate the effect of SiN x passivation on the conduction mechanisms of two-dimension electron gas (2DEG) in Al x Ga 1Àx N/GaN heterostructures [14][15][16][17][18][19]. Although the electrical properties of MIS, MOS, MOSFET, and HEMT structures have been studied for four decades, not much work has been carried out on the dielectric properties, especially considering the structures [18][19][20] in the wide frequency and temperature range.…”

Section: Introductionmentioning

confidence: 99%

Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan

Şafak

Taşçıoğlu

et al. 2010

Microelectronic Engineering

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The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε'), dielectric loss (ε' '), loss tangent (tand), σ ac and the real and imaginary part of the electric modulus (M' and M' ') were found to be a strong function of frequency and temperature. A decrease in the values of ε' and ε' ' was observed, in which they both showed an increase in frequency and temperature. The values of M' and M' ' increase with increasing frequency and temperature. The σ ac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the e' and σ ac. © 2009 Elsevier B.V. All rights reserved

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Effects of the passivation of SiN with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in Al Ga1−N/GaN heterostructures

Cited by 11 publications

References 24 publications

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures

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