Effects of thermal annealing of W/SiO2 multilayer Bragg reflectors on resonance characteristics of film bulk acoustic resonator devices with cobalt electrodes

Yim, Munhyuk; Kim, Dong‐Hyun; Chai, Dongkyu; Yoon, Giwan

doi:10.1116/1.1690248

Cited by 16 publications

(7 citation statements)

References 8 publications

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“…10,13 In the asdeposited SiO 2 / W multilayer, some physical defects may exist and/or some poor adhesions may occur at interfaces between the physically deposited films, hence degrading the device performance. 11 At the optimum annealing condition, the S 11 value was observed as −50.61 dB ͑at 250°C͒. 20 The adhesion issues here could be resolved by inserting very thin adhesion layers between the W and SiO 2 layers in the SiO 2 / W multilayered BR.…”

Section: Resultsmentioning

confidence: 96%

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Second-order resonant ZnO-based film bulk acoustic resonator devices and thermal techniques to improve their resonant characteristics

Mai

Pham²,

Yoon³

2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inViscosity sensor using ZnO and AlN thin film bulk acoustic resonators with tilted polar c-axis orientations J. Appl. Phys. 110, 094511 (2011); 10.1063/1.3657781Mass sensitivity of thin film bulk acoustic resonator sensors based on polar c-axis tilted zinc oxide and aluminum nitride thin film Field and temperature dependent parameters of the dc field induced resonances in Ba x Sr 1 − x Ti O 3 -based tunable thin film bulk acoustic resonatorsIn this article, the authors describe a novel fabrication technique of ZnO-based film bulk acoustic resonator ͑FBAR͒ devices using a new type of multilayered Bragg reflector with very thin chromium ͑Cr͒ layers additionally formed between silicon dioxide ͑SiO 2 ͒ and tungsten ͑W͒ layers. Each Cr layer is considered to enhance the adhesion between the SiO 2 and W layers. The fabricated FBAR devices are shown to operate at the frequency range of 2.7-3.0 GHz, along with good return loss as well as high Q factors. Furthermore, various thermal treatments are performed to further improve the resonant characteristics of the FBAR devices, and also their effects on the device characteristics are investigated. At the second-order resonant frequency, excellent resonant characteristics are observed in terms of high return loss and good figure of merit. This feasibility study indicates that the novel fabrication technique can be useful for future broadband mobile worldwide interoperability for microwave access applications.

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Section: Resultsmentioning

confidence: 96%

“…[10][11][12][13] Also, the temperature variations and compensations in the FBAR devices have been investigated. [10][11][12][13] Also, the temperature variations and compensations in the FBAR devices have been investigated.…”

Section: Introductionmentioning

confidence: 99%

Second-order resonant ZnO-based film bulk acoustic resonator devices and thermal techniques to improve their resonant characteristics

Mai

Pham²,

Yoon³

2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…In general, the annealing treatments have been used for improving the film quality, thereby leading to the performance improvement of the FBAR devices. 10,11 In this work, the effects of the post-annealing treatments on the microstructures of the N-incorporated ZnO films were investigated for the first time. Fig.…”

Section: Effects Of Post-annealing Treatment On the Microstructures Omentioning

confidence: 99%

Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication

Lee

Yoon

2011

Journal of Applied Physics

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Nitrogen [N]-incorporated ZnO films with columnar grains of a preferred c-axis orientation were deposited on p-Si (100) wafers, using an RF magnetron sputter deposition technique. For the N incorporation into the ZnO films, an N 2 O gas was used as a doping source and also various process conditions such as N 2 O gas fraction and RF power were applied. Besides, some of the ZnO films were treated with the post annealing process. And then, the micro-structural characteristics of the N-incorporated ZnO films were investigated by a scanning electron microscope, an X-ray diffractometer, and an atomic force microscope techniques. Finally, employing the N-incorporated ZnO films, the solidly mounted resonator-type film bulk acoustic wave resonator devices were fabricated and their resonance characteristics were extracted. As a result, an excellent return loss (S 11

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“…In recent years, piezoelectric materials have been used in surface acoustic wave (SAW) resonators [1][2][3][4][5] and film bulk acoustic wave resonators (FBARs) [6][7][8][9][10] because of their low cost, low weight, and good reproducibility. However, the SAW resonator has high insertion loss and poor power handling capability.…”

Section: Introductionmentioning

confidence: 99%

Biosensor for human IgE detection using shear-mode FBAR devices

Chen¹,

Shih²,

Chang³

et al. 2016

Nano Online

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Film bulk acoustic resonators (FBARs) have been evaluated for use as biosensors because of their high sensitivity and small size. This study fabricated a novel human IgE biosensor using shear-mode FBAR devices with c-axis 23°-tilted AlN thin films. Off-axis radio frequency (RF) magnetron sputtering method was used for deposition of c-axis 23°-tilted AlN thin films. The deposition parameters were adopted as working pressure of 5 mTorr, substrate temperature of 300°C, sputtering power of 250 W, and 50 mm distance between off-axis and on-axis. The characteristics of the AlN thin films were investigated by X-ray diffraction and scanning electron microscopy. The frequency response was measured with an HP8720 network analyzer with a CASCADE probe station. The X-ray diffraction revealed (002) preferred wurtzite structure, and the cross-sectional image showed columnar structure with 23°-tilted AlN thin films. In the biosensor, an Au/Cr layer in the FBAR backside cavity was used as the detection layer and the Au surface was modified using self-assembly monolayers (SAMs) method. Then, the antigen and antibody were coated on biosensor through their high specificity property. Finally, the shear-mode FBAR device with k t 2 of 3.18% was obtained, and the average sensitivity for human IgE detection of about 1.425 × 10 5 cm 2 /g was achieved.

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Effects of thermal annealing of W/SiO2 multilayer Bragg reflectors on resonance characteristics of film bulk acoustic resonator devices with cobalt electrodes

Cited by 16 publications

References 8 publications

Second-order resonant ZnO-based film bulk acoustic resonator devices and thermal techniques to improve their resonant characteristics

Second-order resonant ZnO-based film bulk acoustic resonator devices and thermal techniques to improve their resonant characteristics

Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication

Biosensor for human IgE detection using shear-mode FBAR devices

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