Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

IET Circuits, Devices & Systems

2018

A 135 nm gate length-based low noise enhancement mode N-polar double deck T-shaped gate Gallium Nitride (GaN) Metal Oxide Semiconductor (MOS)-high electron mobility transistor with double insulating layer of high-k dielectrics ZrO 2 /HfO 2 is proposed. The device exhibits maximum transconductance of 0.55 S/mm, maximum drain current density of 1.4 A/mm and minimum noise figure (NF min) of 0.72 dB at 20 GHz. A compact model for Two Dimensional Electron Gas (2DEG) density is developed by explicit solution of surface potential and Fermi level by considering first two sub-bands of triangular quantum well without using any numerical methods. Based on the surface potential drain current, intrinsic charge, gate capacitance, small signal and thermal noise models are developed. To validate the proposed numerical model, the results are calibrated with TCAD device simulation results and available experimental data from literatures.

Section: Introductionmentioning

confidence: 99%

Compact thermal noise model for enhancement mode N‐polar GaN MOS‐HEMT including 2DEG density solution with two sub‐bands

IET Circuits, Devices & Systems

2018

“…GaN high electron mobility transistor (HEMT) is one of the potential candidates for monolithic microwave integrated circuit transceiver design due to its high power, high frequency, and low noise performances . Most of the developed AlGaN/GaN‐based HEMTs and metal‐oxide‐semiconductor HEMTs (MOS‐HEMTs) are depletion type due to unique material properties of GaN, which lead to spontaneous and piezoelectric polarizations for 2‐dimensional electron gas (2DEG) formation at the heterointerface . Although depletion‐mode HEMTs are applicable for microwave power amplifiers and low noise and radio frequency (RF) switching devices, enhancement‐mode MOS‐HEMT has added advantages in simpler circuit design and low power consumption due to elimination of negative power supply, which is best suitable for RF integrated circuit design.…”

Section: Introductionmentioning

confidence: 99%

“…To obtain normally off AlGaN/GaN HEMT, different approaches have been reported in various literatures by applying different techniques . Gate recess technique is one of the most important techniques that is widely used to get enhancement‐mode operation by using different insulators below the gate region to minimize the gate leakage current, thereby reducing noise.…”

Section: Introductionmentioning

confidence: 99%

Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters

Int J Numerical Modelling

2018

Self Cite

In this paper, the effects of gate induced noise for a gate recessed enhancement‐mode GaN‐based metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) is investigated. To analyze this, a surface potential–based compact model for gate induced noise is developed. The model is validated by comparing with TCAD device simulation results as well as with the available experimental data of GaN HEMT and MOS‐HEMT having different gate lengths and widths from the literature. With the help of the developed model, the effect of oxide thickness on different noise sources is investigated by considering all high‐frequency noise sources including the shot noise resulted from gate leakage current. The effects of gate leakage current on different technology dependent parameters such as oxide thickness and gate length are also investigated. A 2‐port noise equivalent circuit for GaN MOS‐HEMT is designed by considering all high‐frequency noise sources. The different noise parameter models are developed from the Y parameters of the 2‐port noise equivalent circuit and compared with available experimental data of GaN HEMT and MOS‐HEMT from literature. The impact of gate induced noise on all noise parameters is also investigated.

“…1. Introduction: Gallium nitride (GaN)-based metal oxide semiconductor-high electron mobility transistors (MOS-HEMTs) have emerged as a potential candidate for future generation radiofrequency (RF) power applications, which not only suppresses the gate leakage current and current collapse but also helps in enhancing the breakdown voltage [1][2][3]. However, most of the proposed GaN MOS-HEMTs are depletion type due to the strong polarisation effects of GaN material.…”

mentioning

confidence: 99%

“…Enhancement mode (E-mode) device has added the advantage of having low power consumption, simpler circuit design and fail safe operation [4,5]. In order to obtain E-mode MOS-HEMT, different techniques are available in the literature, which uses different gate insulators beneath the gate [1][2][3]. Recently ferroelectric materials have been used beneath the gate to obtain E-mode operation due to its strong polarisation effects, which results in polarisation engineering of twodimensional electron gas (2DEG) and shifts the threshold voltage towards the positive direction.…”

mentioning

confidence: 99%

Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology

2019

Micro & Nano Letters

In this work, an enhancement mode dual gate ferroelectric gallium nitride metal oxide semiconductor-high electron mobility transistor (GaN MOS-HEMT) is proposed with enhanced linearity characteristics. The different DC characteristics of the device are analysed and compared with available experimental data of single gate un-recessed ferroelectric GaN MOS-HEMT. In order to analyse the linearity performance of the devices, a look up table-based large signal model is developed directly from technology computer-aided device simulation results built by feeding different small signal parameters. The different linearity characteristics such as input third-order intercept point (IIP3), the input gain compression point (P1dB), third-order intermodulation (IM3) and the carrier to intermodulation power ratio of both the devices are compared by harmonic balance simulation of the developed large signal models. The interlink between IIP3 and IM3 with transconductance indicates that the broader the transconductance distribution with respect to different gate voltage generates higher IIP3 and lower IM3, which results in an improved linearity performance. The dual gate device shows improved linearity performance resulting in applicability in radiofrequency front end receiver.