“…5(a) , the BSBS power gain is shown as a function of the defect-induced stiffness change, Δ c , assuming air cover, H = 300 nm, W = 236 nm, λ p = 450 nm and Q factor = 3000. Our investigations indicate that with the increase of Δ c from 0 to 30 GPa, the bulk modulus (defined as in 31 ) decreases monotonically, inducing the reduction of Al x Ga 1−x N resistance to uniform compression. At the same time, shear modulus, and Young’s modulus (defined as in 31 ) increase monotonically, while the Poisson’s ratio decreases.…”