This article is interested in the study of the carrier density, the redial displacement, the conductive temperature, thermodynamic temperature and the stresses in a semi-conductor material containing a spherical hole. This investigation deals with the photo-thermo-elastic interactions in a semi-conductor medium in the context of the new hyperbolic two-temperatures model with one relaxation time. The Laplace transform technique are used to obtain the problem analytical solution by the eigenvalues methods and the inversions of the Laplace transform were performed numerically. Numerical results for semi-conductor materials are shown graphically and discussed.