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A general solution for propagating waves in a generalized piezo-photo-thermoelastic medium for the one-dimensional (1D) problem under the hyperbolic two-temperature theory is investigated. The governing equations of the elastic waves, carrier density (plasma wave), quasi-static electric field, heat conduction equation, hyperbolic two temperature coefficient and constitutive relationships for the peizo-thermoelastic medium are obtained using Laplace transformation method in 1D. On the interface adjacent to the vacuum, mechanical stress loads, thermal and plasma boundary conditions are applied to obtain the main basic physical quantities in the Laplace domain. The inversion of Laplace transform by a numerical method is applied to obtain the complete solutions in the Laplace time domain for the main physical fields in this phenomenon. The effects on the force stress, displacement component, temperature distribution and carrier density of the thermoelastic, thermoelectric and hyperbolic two-temperature parameters by the applied force were graphically discussed.

The purpose of the present article is the study of the effect of the gravity field on an initially stressed micropolar thermoelastic medium with microtemperatures. The analytical method used to obtain the formula of the physical quantities is the normal mode analysis. The comparisons are established graphically in the presence and the absence of gravity, initial stress and micropolar thermoelasticity. The main conclusions state that the gravity, initial stress and the micropolar thermoelasticity are effective physical operators on the variation of the physical quantities. The microtemperatures are very useful theory in the field of geophysics and earthquake engineering.

The model of the equations of generalized thermoelasticity in a semi-conducting medium with two-temperature is established. The entire elastic medium is rotated with a uniform angular velocity. The formulation is applied under Lord-Schulman theory with one relaxation time. The normal mode analysis is used to obtain the expressions for the considered variables. Also some particular cases are discussed in the context of the problem. Numerical results for the considered variables are obtained and illustrated graphically. Comparisons are also made with the results predicted in the absence and presence of rotation as well as two-temperature parameter.Keywords: Normal mode analysis; Lord-Shulman theory; Rotation; Conductive temperature; Semiconductors Nomenclature a * -two temperature parameter ce -specific heat at constant strain DE -carrier diffusion coefficient * Corresponding Author.

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