Effects of Wall Charge on Firing Voltage and Statistical Delay Time in Alternating-Current Plasma Display Panels

Abstract

The effects of wall charge on firing voltage, V f, and the statistical delay time of discharge, t s, in plasma display panels were investigated. V f, i.e., the ion-induced secondary electron emission, is independent of both the polarity and amount of wall charge. In contrast, t s, i.e., the exoelectron emission, strongly depends on the wall charge and is smaller for a high positive wall charge, revealing the coexistence of trapped electrons and holes in the surface region. Positive charging of the MgO surface of the cathode side is effective to improve the response of the address discharge.

Accumulation and Decay Characteristics of Exoelectron Sources at MgO Protective Layer Surface in Alternating-Current Plasma Display Panels

“…test panel. 19) The panel was sealed with a discharge gap of 100 mm and filled with the discharge gas of a Ne-Xe (10%) gas mixture at 60 kPa. The panel consisted of a pair of glass plates of the same structure facing each other.…”

“…The authors have been involved in the study of the effects of charging on the electron emission from insulator film surfaces. [13][14][15][16][17][18][19] In the previous study, we investigated the effects of the amount and polarity of wall charge on t s and found that a positive wall charge on the MgO surface of the cathode side is advantageous in improving the response of the discharge. 19) In this study, we investigated the effects of wall charge on the property of exoelectron emission in AC-PDPs, in particular, the accumulation and decay of exoelectron sources, by measuring the discharge characteristics, i.e., the statistical delay time, t s , using a specially designed test panel.…”

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

“…Therefore, γ is one of the most important parameters of the MgO protective layer for improving the discharge characteristics, 1,6 and the IISE phenomenon in MgO films has been intensively studied. [7][8][9][10][11][12][13][14][15] The magnitude of γ is strongly influenced by the MgO film electronic structure. It has been reported that γ is closely related to defect states 16 and γ increases as the number of surface defect states in MgO increases.…”

44.4: UV Emission Characteristics of Crystal Type MgO, MgO:Si, MgO:Sc, and Mg0.85Ca0.15O

“…It is well known that exoelectron emission from electron traps is much stronger, if there was a positive wall charge deposited in the previous cycle [1]. We therefore use Cathode Luminescence to simulate the joint presence of both free electrons and holes inside the crystal-type of protective layer.…”