Efficiency comparison between Si and SiC‐based implementations in a high gain DC–DC boost converter

León-Masich, Antonio; Valderrama-Blavi, Hugo; Bosque-Moncusí, Josep María; Martínez-Salamero, L.

doi:10.1049/iet-pel.2014.0591

Cited by 31 publications

(17 citation statements)

References 43 publications

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“…4 it can found that the maximum load current at BM occurs at D ST = 0.1163. For the design parameters and by substituting D ST = 0.1163 in (32), a minimum magnetising inductance as a function of maximal load current at BM (I oB max ) can be obtained.…”

Section: Input Current Ripple and Minimum Inductance For Ccmmentioning

confidence: 99%

“…Nevertheless, low efficiency at high voltage gain is a concern for any dc-dc converter. Some investigations have shown that the use of Silicon Carbide semi-conductors has a considerable efficiency improvement in high gain converters [32]. Measured efficiency of the proposed CIC converter for various input voltage is drawn in Fig.…”

Section: Input Current Ripple and Minimum Inductance For Ccmmentioning

confidence: 99%

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Galvanically isolated high gain Y‐source DC–DC converters for dispersed power generation

Forouzesh

Baghramian

2016

IET Power Electronics

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This study deals with a novel high voltage gain isolated dc-dc converter that utilise a versatile Y-source for its boosting stage. Having Y-source impedance network, isolation transformer and voltage doubling rectifier, the proposed converter can achieve high voltage gain with reduced stress on its components. Since continuous input current (CIC) ability is an advantageous characteristic of dc-dc converters tied to renewable energy sources, a CIC version of the proposed converter is well demonstrated and discussed in the study. In addition, detailed operation principles of the proposed converters are mathematically expressed. Simulation results from Simulink\Pspice interface have examined the performance of proposed converters in both boost and normal operation modes. Finally, a laboratory prototype was built to evaluate the theoretical assumptions. Besides, in the experiment a TMS320F2812 digital signal processor board was used for generating the shifted shoot-through control method. Experimental results in both operation modes show a reliable performance for the proposed CIC converter and its counterpart.

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Section: Input Current Ripple and Minimum Inductance For Ccmmentioning

confidence: 99%

Section: Input Current Ripple and Minimum Inductance For Ccmmentioning

confidence: 99%

Galvanically isolated high gain Y‐source DC–DC converters for dispersed power generation

Forouzesh

Baghramian

2016

IET Power Electronics

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“…One of the key concerns for end users of IGBT power modules is the power loss characteristics of the devices. Since the traditional silicon (Si) based devices have almost reached their upper limit of power loss optimisation, the wide bandgap (WBG) materials [4][5][6], such as silicon carbide (SiC) and gallium nitride, have been identified as promising alternatives due to their superior material properties, such as higher breakdown voltage level, higher barrier heights, higher operation temperature and higher thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Hybrid 3.3 kV/450 A half‐bridge IGBT power module with SiC Schottky barrier diodes

Luo

Huang

et al. 2020

IET Power Electronics

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This work presents a hybrid 3.3 kV/450 A insulated-gate bipolar transistor (IGBT) power module, utilising the halfbridge topology. In contrast to the traditional fashion, each IGBT chip in this module is allocated with two anti-parallel silicon carbide (SiC) Schottky barrier diodes (SBDs). Each SBD describes smaller footprint than the conventionally used silicone (Si) based fast recovery diode at this voltage and current level. By adopting smaller SiC SBDs in this hybrid-style packaging structure, the SBD chip yield can be greatly improved, without any additional fabrication cost. To benchmark the advantages of this hybrid power module over the Si-based counterpart, both power modules are designed, fabricated as well as tested statically and dynamically. It is shown that while both types show similar thermal behaviour, the hybrid power module describes much lower IGBT turn-on current overshooting, diode reverse recovery loss and IGBT turn-on loss. Based on the measured results, the power losses of both modules under a three-phase inverter operation condition are calculated, showing that the hybrid module has considerably lower power losses and junction temperature rise.

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“…A high voltage gain boost converter was designed for low power application (≈ 20 W) which is suitable for light emitting diode (LED). DC-DC converter efficiency was improved from 76 to 89% and 68 to 81% with variation in the switching frequency from the 120 kHz to 20 kHz at 600 V and 900 V output voltage, respectively [12]. Han et al have performed the comparative study on the efficiency, weight and volume of SiC and Si based bidirectional DC-DC converter for the hybrid electrical vehicle.…”

Section: Introductionmentioning

confidence: 99%

Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC–DC boost converter

2019

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In present study, a comparative efficiency analysis for silicon (Si), silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) and insulated gate bipolar transistor (IGBT) device based DC-DC boost converter is performed. Due to different gate-drive characteristics of power semiconductor devices such as Si, SiC MOSFETs and IGBT device, different voltage levels are required to drive aforementioned devices. A 500 W boost converter for wide input voltage range (30-72 V) and 110 V output voltage is designed having a single gate driver circuit for Si, SiC MOSFETs and IGBT. A single gate driver provides the gate-source (or base-emitter in case of IGBT) signal for all the devices which eliminates the use of separate gate driver circuit. Si MOSFET and IGBT are driven by 12 V gate-source voltage whereas SiC MOSFET is operated by 18 V gate-source voltage using the gate driver circuit. An experimental study is performed for the comparative efficiency analysis for Si, SiC MOSFETs and IGBT device based converter for 20 and 50 kHz switching frequencies. It is found that SiC based converter provides highest efficiency ≈ 97.8%, whereas the lowest efficiency ≈ 94% is found for IGBT based converter at 20 kHz switching frequency. SiC based converter gives higher efficiency because lower conduction loss owning to lower on-state resistance as compared to Si MOSFET. Besides this, SiC application has another advantage such as low switching loss at higher frequency resulting compact size of converter. However, use of IGBT at higher switching frequency results in higher switching losses, hence lower efficiency of the converter.

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Efficiency comparison between Si and SiC‐based implementations in a high gain DC–DC boost converter

Cited by 31 publications

References 43 publications

Galvanically isolated high gain Y‐source DC–DC converters for dispersed power generation

Galvanically isolated high gain Y‐source DC–DC converters for dispersed power generation

Hybrid 3.3 kV/450 A half‐bridge IGBT power module with SiC Schottky barrier diodes

Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC–DC boost converter

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