Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer

Abstract

In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cell efficiency. The first oxidation step had a growth temperature of 780°C, a growth time of 5 min, and with N 2 /O 2 gas flow ratio 12 : 1. The second oxidation had a growth temperature of 750°C, growth time of 20 min, and under pure N 2 gas environment. Carrier lifetime was increased to 15.45 μs, and reflectance was reduced 0.52% using the two-step growth method as compared to the conventional one-step growth oxide passivation method. Consequently, internal quantum efficiency of the solar cell increased 4.1%, and conversion efficiency increased 0.37%. These results demonstrate that the two-step thermal oxidation process is an efficient way to increase the efficiency of the multicrystalline silicon solar cells.

Tunnel Oxide Deposition Techniques and Their Parametric Influence on Nano-Scaled SiOx Layer of TOPCon Solar Cell: A Review

“…Liu et al developed the SiO 2 layer via RTO and demonstrated a 19.49 µs carrier lifetime with a nominal 0.87% reflectance [95]. An additional model developed by Liao et al produced the coating of SiO x with the RTO thermal oxidation method in two stages [96]. The developed layer indicated enhanced efficiency of the cell, minimum surface recombination velocity, and improved carrier lifetime, which is approximately 15.45 µs.…”

“…A basic economical and minimum temperature manufacturing technique must be established for confronting financial disputes. Plasma-enhanced chemical vapor deposition (PECVD) is an efficient method for passivation at the minimum cell temperature, and the substratum temperature varies from 250 to 350 • C [96][97][98]. The PECVD technique was applied for the development of a layer with SiO x for both n-type and p-type solar cells along with the assistance of CO 2 gas, temperature, and pressure.…”