Efficiency improvement of a-Si:H Thin-Film Solar Cells by phosphorus doping of absorption layer with a-Si:H buffer layer at p/i interface

Son, Won Ho; Lee, Si-Hun; Kim, Jae Keon; Choi, Sie Young; Kong, Seong Ho; Jung, Daewoong

doi:10.1080/15421406.2019.1596229

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…For the blue light, the EQE value is almost independent of the thickness of i-layer. Previous study [6] indicates that the increase of i-layer thickness of pin diode beyond a critical value will lead to the deterioration of performance. It is difficult to improve the EQE through increasing the thickness of i-layer from 200 nm to 300 nm under green and blue light illumination conditions, due to the limited absorption depth and the carrier recombination phenomenon.…”

Section: Sid 2020 Digest • 1669mentioning

confidence: 97%

P‐83: Tuning the External Quantum Efficiency and Reverse Bias of PIN Photodiode

Jiyue¹,

Song²,

Gong³

et al. 2020

Symp Digest of Tech Papers

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The boron implantation and intrinsic layer thickness effects on the external quantum efficiency of pin photo sensor are investigated. It is found that the light absorption by p+ layer and asymmetric carrier loss phenomenon will be serious in the high implantation voltage condition, which will lead to the decrease of external quantum efficiency (EQE) of photodiode. The dark current at the range of reverse bias can be reduced through controlling the hydrogen content, film stress and intrinsic layer thickness of pin photodiode. The EQE of photodiode under red light illumination (680 nm) can be enhanced from 35.8% to 45.2% by increasing the intrinsic layer thickness from 200 nm to 300 nm.

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Section: Sid 2020 Digest • 1669mentioning

confidence: 97%

P‐83: Tuning the External Quantum Efficiency and Reverse Bias of PIN Photodiode

Jiyue¹,

Song²,

Gong³

et al. 2020

Symp Digest of Tech Papers

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Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study

Hamdani

Cahyono

Yudoyono

et al. 2021

Molecular Crystals and Liquid Crystals

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The advantages of employing i-a-SiO_X:H as a buffer layer in hydrogenated amorphous silicon oxide solar cells

Belabbas,

Belfar

2024

Phys. Scr.

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This study focuses on a p-i-n single junction solar cell made of hydrogenated amorphous silicon oxide (a-SiOx:H), aiming to enhance solar cell efficiency by mitigating the impact of discontinuities and mismatches occurring at the i/p defect-rich interface between the window layer and the absorber layer. To address this concern, the impact of adding a thin i-a-SiOx:H buffer layer between the p-a-SiOx:H window layer and the i-a-SiOx:H active layer was investigated through numerical modeling using the AMPS-1D (Analysis of Micro-electronic and Photonic Structures) computer program. Implementing these changes led to a remarkable increase in conversion efficiency, rising from 5.714% to an impressive 8.929%. The increase in short-circuit current (JSC), however, is due to improved quantum efficiency at short wavelengths between 350 and 550 nm. Furthermore, enhancing the built-in potential (Vbi) at the i/p interface, combined with the buffer layer's appropriate band gap energy, increases VOC (open-circuit voltage) from 850 to 993 mV. The substantial improvement in the fill factor (FF) from 63.1 to 83.1% can be largely attributed to the smoothed band offset, primarily facilitated by the presence of the buffer layer at the p/i interface, which led to more efficient extraction of photogenerated holes. To ensure effective usage of the buffer layer, the thickness of a-SiOx:H (buffer layer) varied between 3 nm and 9 nm, while the p-type doping concentration of the same layer was adjusted between 0 and 1020 cm-3. In summary, adding a 3 nm thick a-SiOx:H buffer layer with an intermediate band gap and with a p-type doping concentration (NA) below 1018 cm-3 at the i/p interface improves the electrical and optical properties of the p-i-n solar cells (EFF = 8.951% VOC = 0.994 V; FF = 83.1%; JSC = 10.842 mA/cm2).

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Efficiency improvement of a-Si:H Thin-Film Solar Cells by phosphorus doping of absorption layer with a-Si:H buffer layer at p/i interface

Cited by 3 publications

References 12 publications

P‐83: Tuning the External Quantum Efficiency and Reverse Bias of PIN Photodiode

P‐83: Tuning the External Quantum Efficiency and Reverse Bias of PIN Photodiode

Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study

The advantages of employing i-a-SiO_X:H as a buffer layer in hydrogenated amorphous silicon oxide solar cells

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Efficiency improvement of a-Si:H Thin-Film Solar Cells by phosphorus doping of absorption layer with a-Si:H buffer layer at p/i interface

Cited by 3 publications

References 12 publications

P‐83: Tuning the External Quantum Efficiency and Reverse Bias of PIN Photodiode

P‐83: Tuning the External Quantum Efficiency and Reverse Bias of PIN Photodiode

Performances analysis of heterojunction solar cells through integration of hydrogenated nanocrystalline silicon bilayer by using numerical study

The advantages of employing i-a-SiOX:H as a buffer layer in hydrogenated amorphous silicon oxide solar cells

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The advantages of employing i-a-SiO_X:H as a buffer layer in hydrogenated amorphous silicon oxide solar cells