Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit

Rijs, F. van; Theeuwen, S.J.C.H.

doi:10.1109/iedm.2006.346998

Cited by 33 publications

(16 citation statements)

References 4 publications

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“…A difference with standard CMOS is that an LDMOS transistor has a drain extension region to support the breakdown voltage. The 30-[1]- [4] and 50-V [10], [11] technology have a typical breakdown voltage of 70 and 120 V, respectively, which requires a drain extension length of 3 and 6 m. The epi thickness is about equal to the drain extension length. The LDMOS n source region is connected to the backside via a metal bridge, a p sinker, and a highly conducting p substrate.…”

Section: Ldmos Device Technologymentioning

confidence: 99%

“…The RF performance of LDMOS has spectacularly improved over the last decades [3], [4]. Today, LDMOS is the leading technology for a wide variety of RF power applications, to mention a few: base station, broadcast, FM, VHF, UHF, industrial, scientific, medical (ISM), and radar [5], while many new opportunities are being considered, e.g., as RF lighting [6] and microwave cooking.…”

Section: Introductionmentioning

confidence: 99%

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LDMOS Technology for RF Power Amplifiers

Theeuwen

Qureshi

2012

IEEE Trans. Microwave Theory Techn.

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We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF power applications for more than one decade. LDMOS fulfills the requirements for a wide range of class AB and pulsed applications, such as base station, broadcast, and microwave. We present state-of-the-art RF performance of the LDMOS transistor measured with a load-pull test setup, achieving class-AB drain efficiencies of 70% at 2 GHz for on-wafer and packaged devices. Furthermore, the results for several class-AB and Doherty amplifier implementations constructed with this technology are shown. As an illustration, a three-way Doherty application is demonstrated, which has a 7.5-dB back-off efficiency of 47% at 1.8 GHz with a peak power of 700 W and linearity numbers better than 65 dBc.Index Terms-Microwave amplifiers, MOSFET power amplifiers (PAs), power amplifiers, semiconductor device fabrication.

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Section: Ldmos Device Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

LDMOS Technology for RF Power Amplifiers

Theeuwen

Qureshi

2012

IEEE Trans. Microwave Theory Techn.

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“…The typical Q factor at 1 -2 GHz was about 10 for spiral inductors, on this kind of low resistivity substrate. The process generation can be tracked back to LDMOS development chart of 0.55 µ gate length [7] [8].…”

Section: Propused Ic Technology and Ic Designmentioning

confidence: 99%

RF Power Amplifier IC with Low Memory Effect, Reduced Low Frequency Gain Peak and Isolated Temperature Tracking Circuitry

Bagger

Olsson²

2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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A highly linear wideband power amplifier IC with low memory effect for W-CDMA applications is presented utilizing Si LDMOS process technology. The IC was optimized to reduce typical low frequency gain peak often observed in LDMOS power devices. Topology of the interstage matching contributes to reduction of the electrical memory effect to specification level of maximum 2 dB imbalance over power between upper and lower Adjacent Channel Power Ratio when using II-tone wideband modulated signal. The on-chip temperature compensation circuitry tracks the active device temperature characteristic without degradation of the linearity or worsens the memory effect. The measured gain of the IC was 28.5 dB and 3-dB bandwidth of 600 MHz around 2100 MHz was achieved. The IC attained -50 dBc ACPR at 5 W output power. At power level of 45 W and IMD3 = -30dBc (two-tone) the IC exhibited power densities in excess of 469 mW/mm, in which matching losses were included. The IC demonstrated state-of-the-art RF power performance in terms of good linearity, low memory effects, well-suppressed low frequency gain peak and temperature tracking without linearity and IMD balance degradation.

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“…The last 5 years, LDMOS transistors for cellular base stations power amplifiers has gone through a tremendous development with a spectacular improvement in available output power, power gain, power added efficiency and linearity together with improvements in hot carrier reliability and thermal resistance [1,2]. This was fueled by introduction of new device architectures such as new shield construction and by introduction of LDMOS technology to advanced CMOS fabs.…”

Section: Introductionmentioning

confidence: 99%

“…Reduction of output losses was the major drive behind the strong improvement obtained in power added efficiency (PAE). The output losses originate primarily from the lossy output capacitance of the transistor as described in [1]. A smaller output capacitance helps to reduce these losses.…”

Section: Introductionmentioning

confidence: 99%

Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications

Rijs

2008

2008 IEEE Radio and Wireless Symposium

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LDMOS technology is the main power amplifier technology used for cellular base stations for frequencies up to 2.14 GHz. With the latest LDMOS technology generations it is however possible, and demonstrated, to use LDMOS for frequencies up to 3.8 GHz. This paper describes the status and trends of LDMOS technology for wireless applications beyond 2.5 GHz.Index Terms -microwave power FET amplifiers , MOSdevices, MOSFET power amplifiers , power amplifiers.

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Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit

Cited by 33 publications

References 4 publications

LDMOS Technology for RF Power Amplifiers

LDMOS Technology for RF Power Amplifiers

RF Power Amplifier IC with Low Memory Effect, Reduced Low Frequency Gain Peak and Isolated Temperature Tracking Circuitry

Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications

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