Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers

Abstract

We report on the carrier recombination mechanisms in dilute nitride Ga(NAsP)/GaP quantum well lasers. Spontaneous emission measurements show that defect-related recombination in the devices is less significant compared with other GaAs-based dilute nitride lasers. From temperature dependent measurements, we find that the threshold current density, Jth is dominated by non-radiative recombination process(es), which account for at least 91% of Jth at room temperature. The characteristic temperature, T0 (T1) is measured to be ∼104 K (∼99 K) around 200 K, which drops to ∼58 K ( ∼37 K) around room temperature. Hydrostatic pressure measurements reveal a strong increase of threshold current with increasing pressure. This implies that current leakage dominates carrier recombination which is also responsible for their low T0 and T1 values at room temperature.

Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

“…Recently, we have reported the efficiencylimiting process(es) in Ga(NAsP) QW lasers on GaP substrate [6], where carrier leakage plays an important role. Since band gap of (BGa)P decreases with increasing boron contents, it is worthy to investigate whether (BGa)P layers provide a carrier leakage path in Ga(NAsP)/(BGa)P/Si QW lasers, which may increase the J th in these devices significantly.…”

A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaN x As y P 1– x–y /GaP quantum wells on GaP substrates

“…[8] Hence, a Ga(NAsP)/GaP quantum well on a silicon substrate is a promising system for lasers. [9] Nevertheless, to optimize the design of an efficient laser structure, the heterojunction band offsets play an important role. To the best of our knowledge, the present study is the first that introduces a theoretical calculation of the band alignment of the quaternary GaN x As y P 1−x−y well material with GaP or AlGaP barriers on GaP and hence on Si substrates.…”

The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

“…Indeed, when compared with $1.2 lm InGaAs/GaAs devices, T 1 is significantly lower in these devices. 18 The lower T 1 is an indication of thermally activated recombination processes, 19 which may occur in these lasers at higher temperatures. However, both T 0 and T 1 for device B are higher than that for device A over the temperature range studied, which is consistent with the reduced J th of device B than that of device A.…”