Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

Mesrine, M.; Grandjean, N.; Massies, J.

doi:10.1063/1.120733

Cited by 127 publications

(78 citation statements)

References 11 publications

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“…At lower substrate temperatures (450 C) the RHEED pattern changes to (11). It has been shown that at this temperature and below, the cracking efficiency of ammonia becomes insignificant [20]. Therefore, we assign this surface phase as (11)-N. We speculate that this phase is linked to the non-dissociative adsorption of NH 3 molecules, while the hightemperature (11)-N phase presumably results from dissociative chemisorption of NH 3 leading to the formation of NH 2 and/or NH chemisorbed radicals.…”

Section: Resultsmentioning

confidence: 99%

Origins of GaN(0001) surface reconstructions

et al. 2003

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The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are observed with RHEED by analyzing patterns while the substrate is exposed to a fixed NH3 flux or after depositing known amounts of Ga as a function of substrate temperature. In situ STM images reveal that only a few of these reconstructions yield long-range periodicity in real space. The controversial role of arsenic on Ga induced reconstructions was also investigated using two independent MBE chambers and X-ray photoelectron spectroscopy.

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Section: Resultsmentioning

confidence: 99%

Origins of GaN(0001) surface reconstructions

et al. 2003

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“…At 500 1C, the growth rate decreased compared with other samples grown with the same V/III ratio. This indicates the lack of reactive nitrogen, which is caused by the sharp drop of the reaction efficiency of ammonia between 600 and 500 1C [4]. TMIn is decomposed completely at temperatures above 400 1C [11].…”

Section: Methodsmentioning

confidence: 99%

“…The growth temperature is limited from above by the desorption of nitrogen and thermal decomposition of the films [3]. From below the growth temperature is limited by low thermal decomposition rate of ammonia (NH 3 ) [4], so a high V/III ratio is needed. The formation of metallic indium is a well-known problem caused by either the lack of reactive nitrogen or the desorption of nitrogen [5].…”

Section: Introductionmentioning

confidence: 99%

Growth of InN by vertical flow MOVPE

Suihkonen

Sormunen

Rangel-Kuoppa

et al. 2006

Journal of Crystal Growth

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InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH 3 , and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 1C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 1C. r

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“…This implies that the amount of nitrogen active species is a function of the substrate temperature. For instance, it has been reported that the decomposition of NH 3 below 450°C is insignificant [5]. When increasing the substrate temperature, the NH 3 efficiency increases too but remains rather low (4 % at 700°C).…”

Section: Resultsmentioning

confidence: 99%

Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

Grandjean¹,

Massies²,

Leroux³

et al. 1999

MRS Internet j. nitride semicond. res.

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The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM ≤ 50 meV) and the Stokes shift measured by PL excitation is weak (<50 meV), i.e. near band edge transitions are observed. Under these conditions, flat surfaces can be obtained, and InGaN/GaN quantum wells (QWs) with sharp interfaces can be grown. On the other hand, when growth conditions depart from a narrow optimum window, the structural quality of the samples strongly degrade, whereas the luminescence spectra are dominated by deep levels, exhibiting a strong Stokes shift. MBE grown light emitting diodes (LEDs) using InGaN/GaN QWs have been fabricated. Their electroluminescence (EL) peaks at 440 nm at 300K.

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Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

Cited by 127 publications

References 11 publications

Origins of GaN(0001) surface reconstructions

Origins of GaN(0001) surface reconstructions

Growth of InN by vertical flow MOVPE

Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

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