Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer

Li, Lufa; Luo, Yaning; Wu, Qianqian; Wang, Lin; Jia, Guohua; Chen, Tao; Zhang, Chengxi; Yang, Xuyong

doi:10.1039/d2nr06618a

Cited by 10 publications

(7 citation statements)

References 41 publications

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“…Additionally, lead-halide perovskite QDs with high defect tolerance and excellent optoelectronic properties, despite their toxicity and stability, have also been recognized . However, the harmful effects on the environment and human health caused by these toxic Cd/Pb-containing QDs motivate the development of high-quality Cd/Pb-free QDs for diverse applications. , …”

Section: Introductionmentioning

confidence: 99%

“…14 However, the harmful effects on the environment and human health caused by these toxic Cd/Pb-containing QDs motivate the development of high-quality Cd/Pb-free QDs for diverse applications. 15,16 Indium phosphide (InP)-based QDs, as an environmentally friendly material, are promising Cd/Pb-free candidates due to their direct band gap ranging from the visible to the near-infrared spectrum. 17 However, the synthetic chemistry of InP QDs remains insufficient, resulting in ensemble line widths that lag behind those of CdSe QDs, despite the intrinsic luminescence line width of single InP QDs being comparable to that of single CdSe QDs.…”

Section: ■ Introductionmentioning

confidence: 99%

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The Narrow Synthetic Window for Highly Homogenous InP Quantum Dots toward Narrow Red Emission

Hu,

He,

Hou

et al. 2024

Inorg. Chem.

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Low-toxicity InP-based quantum dots (QDs) exhibit potential for replacing Cd/Pb-containing QDs in the visible and near-infrared regions. Despite advancements, further improvement relies on synthesizing homogeneous InP QDs to achieve a high color purity. In a commonly employed two-step "seed-mediated" synthetic approach, we demonstrate the high sensitivity of InP seed sizes and size distribution to the quantities of trioctylphosphine (TOP) and tris(trimethylsilyl)phosphine [(TMS) 3 P], attributed to the process of "self-focusing of size distribution" and enhanced reactivity of In-oleate through coordination with TOP. During growth, the processes of size focusing and defocusing are modulated by the accumulation of oleic acid and TOP molecules, as well as the amount of (TMS) 3 P in the growth precursor, which may relate to the dissolution process of InP magic size clusters. Through precise control, the best valley/depth ratio of InP QDs was 0.52 at the first absorption peak at 571 nm, resulting in luminescence with a full width at half-maximum of 35 at 620 nm with an absolute photoluminescence quantum yield around 90% after heteroepitaxial growth with ZnSe and ZnS shells.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

The Narrow Synthetic Window for Highly Homogenous InP Quantum Dots toward Narrow Red Emission

Hu,

He,

Hou

et al. 2024

Inorg. Chem.

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“…Colloidal quantum dots (QDs), as a new type of semiconductor materials with several nanometers, have drawn much attention due to their unique properties, − and have been applied in various applications, such as optoelectronic devices, − catalysis, , bioimages, − etc. Among them, cadmium-based (Cd-based) QDs have exhibited excellent performance and great application potential. , Unfortunately, the toxicity of Cd hinders their widespread utilization.…”

Section: Introductionmentioning

confidence: 99%

Sequential Growth of InP Quantum Dots and Coordination between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

Cui,

Qin,

et al. 2023

ACS Appl. Nano Mater.

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As a kind of luminescent nanomaterial, InP quantum dots (QDs) have been regarded as one of the most potential nontoxic alternatives for cadmium-based QDs in the light-emitting devices, and much progress has been obtained recently. However, their growth kinetics remains not fully revealed yet, and the effects of the shelling process on as-synthesized InP cores have been rarely investigated. Herein, the growth kinetics of InP QDs is investigated via the convenient method of varying halide ions, and their sequential growth is proposed according to the discontinuous evolution of their first exciton absorption peaks, especially the observed typical positions, which is different from the reported continuous evolution previously and means that the specific sized InP cores appeared during the growth stage. Moreover, the impacts of ZnS are analyzed from the quantum confinement effect of ZnS on InP cores with different sizes and interfacial heterovalent bonds. The coordination between these two aspects decides the final positions of the first exciton absorption peaks of InP/ZnS QDs. Compared with the positions of the first exciton absorption peaks of bare InP QDs, insufficient confinement of the ZnS shell to small InP cores causes the red-shift, but the heterovalent bonds at the interface cause the blue-shift. Furthermore, the emissions of final InP/ZnS QDs are influenced, and the emission from 484 to 578 nm is obtained via this facile synthetic protocol. It is thought that this study can reveal the growth of InP QDs and provide guidance to design rational InP-based QDs with desired emission and high performance, contributing to the fabrication of efficient light-emitting devices.

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“…Environmentally benign indium phosphide (InP) quantum dots (QDs) have gained significant attention as a promising platform for commercializing quantum dot light-emitting diodes (QD-LEDs) due to their highly efficient, stable, and color-pure photoluminescence (PL) with a near-unity PL quantum yield and narrow-band emission [ 1 , 2 , 3 , 4 , 5 , 6 ]. However, the retention of these remarkable properties in electroluminescence (EL) remains challenging [ 7 , 8 , 9 , 10 , 11 ]. The PL and EL each involve the recombination of non-equilibrium charge carriers, but they differ in their charge generation processes.…”

Section: Introductionmentioning

confidence: 99%

Charge Injection and Energy Transfer of Surface-Engineered InP/ZnSe/ZnS Quantum Dots

Park

Kim

2023

Nanomaterials

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Surface passivation is a critical aspect of preventing surface oxidation and improving the emission properties of nanocrystal quantum dots (QDs). Recent studies have demonstrated the critical role of surface ligands in determining the performance of QD-based light-emitting diodes (QD-LEDs). Herein, the underlying mechanism by which the capping ligands of InP/ZnSe/ZnS QDs influence the brightness and lifetime of the QD-LEDs is investigated. The electrochemical results demonstrate that highly luminescent InP/ZnSe/ZnS QDs exhibit modulated charge injection depending on the length of the surface ligand chains: short alkyl chains on the ligands are favorable for charge transport to the QDs. In addition, the correlation between the spectroscopic and XRD analyses suggests that the length of the ligand chain tunes the ligand–ligand coupling strength, thereby controlling the inter-QD energy transfer dynamics. The present findings shed new light on the crucial role of surface ligands for InP/ZnSe/ZnS QD-LED applications.

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Efficient and bright green InP quantum dot light-emitting diodes enabled by a self-assembled dipole interface monolayer

Abstract: The interface state between the hole transport layer (HTL) and the quantum dots (QDs) plays a crucial role in the optoelectronic performance of light-emitting diodes. Herein, we reported an efficient...

Cited by 10 publications

References 41 publications

The Narrow Synthetic Window for Highly Homogenous InP Quantum Dots toward Narrow Red Emission

The Narrow Synthetic Window for Highly Homogenous InP Quantum Dots toward Narrow Red Emission

Sequential Growth of InP Quantum Dots and Coordination between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

Charge Injection and Energy Transfer of Surface-Engineered InP/ZnSe/ZnS Quantum Dots

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