Efficient and controllable growth of vertically oriented graphene nanosheets by mesoplasma chemical vapor deposition

Zhang, Huan; Wu, Sudong; Chen, Xinchun; Chen, Qixian; Gao, Pingqi; Yu, Tianbao; Peng, Zhijian; Ye, Jichun

doi:10.1016/j.carbon.2019.01.042

Cited by 43 publications

(44 citation statements)

References 33 publications

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“…The growth rate of PECVD techniques is usually limited to tens of nanometers per minute that is insufficient for practical applications. Zhang et al [41] used “high density meso-plasma CVD” and obtained fast growth rate of the order of ~10 µm/min, depending on a power of a radio-frequency (RF) generator and CH 4 flow rate. The meso-plasma system was actually a modified ICP-jet plasma in combination with a planar-coiled antenna.…”

Section: Early Scientific Documents Of Plasma Synthesis Of Carbon mentioning

confidence: 99%

“…The highest growth rate was observed when combining the CCP with ICP. Unfortunately, only one author reported such a large growth rate [41]. The ICP in the H-mode is known for its ability to absorb large RF powers in small volumes so it can be concluded that the large power density is beneficial for fast growing of the CNWs.…”

Section: Comparison Of Available Literaturementioning

confidence: 99%

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Synthesis of Vertically Oriented Graphene Sheets or Carbon Nanowalls—Review and Challenges

et al. 2019

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The paper presents a review on the current methods for deposition of vertically oriented multilayer graphene sheets (often called carbon nanowalls—CNWs) on solid substrates. Thin films of CNWs are among the most promising materials for future applications in capacitors, batteries, electrochemical devices, and photovoltaics, but their application is currently limited by slow deposition rates and difficulties in providing materials of a desired structure and morphology. The review paper analyzes results obtained by various groups and draws correlations between the reported experimental conditions and obtained results. Challenges in this scientific field are presented and technological problems stressed. The key scientific challenge is providing the growth rate as well as morphological and structural properties of CNWs thin films versus plasma parameters, in particular versus the fluxes of reactive plasma species onto the substrate surface. The technological challenge is upgrading of deposition techniques to large surfaces and fast deposition rates, and development of a system for deposition of CNWs in the continuous mode.

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Section: Early Scientific Documents Of Plasma Synthesis Of Carbon mentioning

confidence: 99%

Section: Comparison Of Available Literaturementioning

confidence: 99%

Synthesis of Vertically Oriented Graphene Sheets or Carbon Nanowalls—Review and Challenges

et al. 2019

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“…Three-dimensional interconnected network structure and rich sharp edges endow VG with many excellent properties, such as high mechanical stability, large specific surface area, and sensitive sensing characteristics [ 12 , 13 , 14 ], which have great potential in various applications (e.g., energy storage, sensors, and thermal management) [ 15 , 16 , 17 , 18 , 19 , 20 ]. Plasma-enhanced chemical vapor deposition (PECVD) is the method most commonly used to synthesize VG [ 12 , 21 , 22 , 23 ]; PECVD can carry out chemical reactions at a relatively low temperature, which results in low thermal kinetic energy for all atoms/ions. The diffusion barrier may be reduced by the electric field-induced polarization effects that in turn will reduce the adhesion/bonding energy of carbon species to the substrate’s surface [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

“…Compared to graphene films grown parallel to the substrate, the growth mechanism of VG is still unclear [ 23 , 24 , 25 , 26 ]. For example, the initial of nucleation is under debate: some reports claim that thermal stress causes the buffer layer to warp, resulting in nucleation sites [ 27 ], while other reports assert that the stress caused by lattice mismatch is the reason for the tear of the buffer layer and the formation of nucleation sites [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Substrate Types on the Structure of Vertical Graphene Prepared by Plasma-Enhanced Chemical Vapor Deposition

et al. 2021

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Although the structure of vertical graphene (VG) is important for various applications, the growth mechanism of VG is not yet fully clear. Here, the impacts of electrical conductivity of substrate on the morphology and structure of VG prepared by plasma-enhanced chemical vapor deposition are studied by scanning electron microscopy and Raman spectroscopy. The results show that VG with greater thickness can be grown on substrate with better electrical conductivity in the same growth time. Even though longer deposition time leads to more VG, more defects might develop in VG, especially at the position furthest away from the substrates. The change of morphology and structure of VG is closely correlated with strength of electric field near the substrate surface, which offers a new approach for orderly growing of VG. The discoveries not only shed light on the growth mechanism of VG, but also are beneficial for promoting the applications of VG.

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“…Many efforts have been made to focus on the control of the plasma power, [ 15,25,31 ] plasma distribution, [ 32,33 ] and sample direction [ 29 ] to optimize the thermodynamic and/or kinetic aspects of nucleation and growth of VSG and to deepen understanding of the growth mechanism. It has been reported recently that meso‐plasma CVD with RF power unit can efficiently modulate the film structure with an extremely high growth rate, [ 34 ] nevertheless the sample dimension was very small and temperature of the local substrate during the growth process was not clear. Although the growth mechanism of carbon nanowalls at relatively high substrate temperature has been intensively studied, showing three steps of nucleation, growth and termination mechanism [ 19 ] or surface diffusion dominant process, [ 35 ] the growth mechanism of VSG is still far from well understood in a PECVD system particularly without external heating of the substrate.…”

Section: Introductionmentioning

confidence: 99%

Heater‐Free and Substrate‐Independent Growth of Vertically Standing Graphene Using A High‐Flux Plasma‐Enhanced Chemical Vapor Deposition

Zhang

Shen

et al. 2020

Adv Materials Inter

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Graphene, a typical 2D nanostructure comprising of sp 2hybridized carbon atoms offers not only superior electron mobility and mechanical strength, but also huge specific surface area and facile functionalization. [4,5] All these merits render the vast utilizations of graphene in optoelectronics, [6,7] FETs, [8,9] sensors, [10] catalysts [11] and energy storage devices. [12,13] Compared with the laid-down graphene, vertically standing graphene (VSG) is composed of folded graphene petals with seamless edges [14] growing nearly perpendicularly to the substrate regardless of catalyst surface. [15-17] The tremendous interests toward VSG stem from its unique properties, such as large surface to volume ratio, nonaggregation morphology, and abundance of exposed and ultrathin edges. [18,19] Along with the excellent intrinsic properties of graphene, VSG exhibits its indispensable roles especially in the fields of emitters, [20] supercapacitors, [21] and fuel cells. [22] Notably, the morphologies and structural features of VSG significantly influences such applications. [12,21] However, conventional deposition processes for VSG are usually carried out above 500 °C [15,21,23-25] with the usual drawback of poor scalability, [26,27] which hampers both scientific research and large scale fabrication. Therefore, an efficient and facile strategy for convenient tuning of VSG morphologies and structures, particularly at significantly reduced temperatures, is of vital importance for practical applications at lowered cost. To date, impressive improvements have been made to reduce fabrication temperature and realize an efficient control of structure and morphology of VSG via sputtering, [28] thermal chemical vapor deposition (TCVD), [23] and plasma enhanced chemical vapor deposition (PECVD). [16] Compared with other techniques, PECVD offers the advantages of low substrate temperature, fast growth, substrate independence and good feasibility in controlling morphologies and structures. [18] In a typical PECVD system, the nonequilibrium plasma dissociates the carbon related gaseous precursors to produce reactive radicals as the building blocks for VSG and the generated energetic electrons boost the reaction kinetics of the growth process at low substrate temperature. We note that the electric field from the plasma sheath perpendicular to the substrate affects the growth Vertically standing graphene (VSG) films have demonstrated various appealing functionalities on the basis of excellent electrical/thermal conductivity and electrochemical/catalytic properties, owing to their unique morphology, preferable orientation of the basal planes, and adequate defects as effective catalytic sites. Most fabrication processes for VSG suffer from the disadvantage of high processing temperature, difficulty in structural control, or poor scalability, which limits their many potential applications. Herein, a scalable high-flux plasma-enhanced chemical vapor deposition system is designed, with streamlined magnetic field to enable high and uniform ion densi...

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Efficient and controllable growth of vertically oriented graphene nanosheets by mesoplasma chemical vapor deposition

Cited by 43 publications

References 33 publications

Synthesis of Vertically Oriented Graphene Sheets or Carbon Nanowalls—Review and Challenges

Synthesis of Vertically Oriented Graphene Sheets or Carbon Nanowalls—Review and Challenges

Effect of Substrate Types on the Structure of Vertical Graphene Prepared by Plasma-Enhanced Chemical Vapor Deposition

Heater‐Free and Substrate‐Independent Growth of Vertically Standing Graphene Using A High‐Flux Plasma‐Enhanced Chemical Vapor Deposition

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