Efficient and flexible memory architecture to alleviate data and context bandwidth bottlenecks of coarse-grained reconfigurable arrays

Yang, Cheng‐Hong; Liu, Leibo; Yin, Shouyi; Wei, Shaojun

doi:10.1007/s11433-014-5610-2

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Memory Access Efficiency1

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Cited by 3 publications

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“…Ref. [52] proposed a three-level data memory hierarchy, including the memory shared among arrays, the memory shared among PEs, and the exclusive memory in PEs, to support data reuse. The memory access conflicts and the required bandwidth of external memory are reduced, increasing the performance by 20%.…”

Section: Memory Access Efficiencymentioning

confidence: 99%

The Principle and Progress of Dynamically Reconfigurable Computing Technologies

Wei

2020

Chin. j. electron.

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Section: Memory Access Efficiencymentioning

confidence: 99%

The Principle and Progress of Dynamically Reconfigurable Computing Technologies

Wei

2020

Chin. j. electron.

Self Cite

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Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition

Liu

Wang

et al. 2016

Sci. China Phys. Mech. Astron.

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Characteristics of Sb ₆ Te ₄ /VO ₂ Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

Hu¹,

Guo²,

Qiu³

et al. 2018

Chinese Phys. Lett.

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The Sb6Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6Te4, Sb6Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6Te4/VO2 has a broader energy band of 1.58 eV and better data retention (125 ∘ C for 10 y). The crystallization is suppressed by the multilayer interfaces in Sb6Te4/VO2 thin film with a smaller rms surface roughness for Sb6Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4(2 nm)/VO2 (8 nm) thin film. The Sb6Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.

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Efficient and flexible memory architecture to alleviate data and context bandwidth bottlenecks of coarse-grained reconfigurable arrays

Cited by 3 publications

References 10 publications

The Principle and Progress of Dynamically Reconfigurable Computing Technologies

The Principle and Progress of Dynamically Reconfigurable Computing Technologies

Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition

Characteristics of Sb ₆ Te ₄ /VO ₂ Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

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Efficient and flexible memory architecture to alleviate data and context bandwidth bottlenecks of coarse-grained reconfigurable arrays

Cited by 3 publications

References 10 publications

The Principle and Progress of Dynamically Reconfigurable Computing Technologies

The Principle and Progress of Dynamically Reconfigurable Computing Technologies

Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition

Characteristics of Sb 6 Te 4 /VO 2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

Contact Info

Product

Resources

About

Characteristics of Sb ₆ Te ₄ /VO ₂ Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory