Efficient and low-voltage vertical organic permeable base light-emitting transistors

Wu, Zhongbin; Liu, Yuan; Guo, Erjuan; Darbandy, Ghader; Wang, Shu‐Jen; Hübner, René; Kloes, Alexander; Kleemann, Hans; Leo, Karl

doi:10.1038/s41563-021-00937-0

Cited by 43 publications

(44 citation statements)

References 52 publications

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“…Reproduced with permission. [127] Copyright 2021, Springer Nature. et al reduced the graphene source electrode under a hydrogen environment that alters the energy level suitable for hole carrier injection.…”

Section: Vertical Olet Voletmentioning

confidence: 99%

“…Wu et al very recently achieved a record EQE of 24.6% by integrating a vertical organic permeable base transistor (OPBT) and multilayer OLED architecture to form an organic permeable base light-emitting transistor (OPB-LET), as displayed in Figure 18g. [127] The OLED stack comprised of HTL/emissive layer/ETL inserted above the MoO x /Au/Ag collector electrode (drain) followed by the deposition of Al base (gate) electrode that was insulated by the dense AlO x oxide layer. The morphological analysis of the Al base electrode revealed the presence of homogeneously distributed pinholes in which Al was not present between the conductive paths that can be filled by the C 60 semiconductor layer.…”

Section: Vertical Olet Voletmentioning

confidence: 99%

“…The list of RGB emitters and their electroluminescent performance were shown in Figure 25c-e. Among the red emitters, [89,90,92,93,107,121,127,156] Alq3 in combination with DCM or DCJTB or PtOEP exhibited EQE in the range of 3-6%, whereas the brightness of most of the red emitters lies below 1000 cd m -2 (Figure 25c). The luminescent characteristics of iridium-based green emitters (GD001, Ir(ppy) 3 ) [100,108,[121][122][123][124]145] range from >3000 to <12 000 cd m -2 with promising EQE of 9-10% which were better than red and blue emitters.…”

Section: Overview Of Rgb Emitters For Full-color Displaymentioning

confidence: 99%

mentioning

confidence: 99%

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En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

Ganesan

Tsao

Gao

2021

Adv Funct Materials

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Organic light-emitting transistors (OLET) evolved from the fusion of the switching functionality of field-effect transistors (FET) with the light-emitting characteristics of organic light-emitting diode (OLED) that can simplify the active-matrix pixel device architecture and hence offer a promising pathway for future flat panel and flexible display technology. This review systematically analyzes the key device/molecular engineering tactics that assist in improving the electrode edge narrow emission to wide-area emission for display applications via three different topics, that is, narrow to wide-area emission, vertical architecture, and impact of high-κ dielectric on the device performance. Source-drain electrode engineering such as symmetric/asymmetric, planar/ non-planar arrangement, semitransparent nature, multilayer approach comprising charge transport, and work function modification layers enable widening the emission zone. Vertical OLET architecture offers short channel lengths with a high aperture ratio, pixel type area emission, and stable lightemitting area. Transistors utilizing high-κ dielectric materials have assisted in lowering the operating voltage, enhancing luminance and air stability. The promising development in achieving wide-area emission provides a solid basis for constructing OLET research toward display applications; however, it relies on developing highly luminescent and fast charge transporting materials, suitable semitransparent source/drain electrodes, high-κ -dielectrics, and device architectural engineering.

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Section: Vertical Olet Voletmentioning

confidence: 99%

Section: Vertical Olet Voletmentioning

confidence: 99%

Section: Overview Of Rgb Emitters For Full-color Displaymentioning

confidence: 99%

mentioning

confidence: 99%

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En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

Ganesan

Tsao

Gao

2021

Adv Funct Materials

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“…[ 19 ] Compared with planar structure OFETs, VOFETs can easily provide high current density and working frequency under low operating voltage due to their inherently small channel length and unique working principle. [ 20–24 ] The continuous improvement of device performance and applications of VOFETs in organic light‐emitting transistors (OLETs), [ 25–28 ] sensors [ 29 ] and memories [ 30–32 ] have proved their great potential for uses in organic electronics. [ 33–37 ] However, the utilization of VOFETs for bias‐stress stable devices has rarely been reported.…”

Section: Introductionmentioning

confidence: 99%

Doped Vertical Organic Field‐Effect Transistors Demonstrating Superior Bias‐Stress Stability

Qiu

Guo

Chen

et al. 2021

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Bias‐stress stability is essential to the practical applications of organic field‐effect transistors (OFETs), yet it remains a challenge issue in conventional planar OFETs. Here, the feasibility of achieving high bias‐stress stability in vertical structured OFETs (VOFETs) in combination with doping techniques is demonstrated. VOFETs with silver nanowires as source electrodes are fabricated and the device performance is optimized by understanding the influence of device parameters on performance. Then, the bias‐stress stability of the optimized PDVT‐10 VOFETs is investigated and found to be superior to the corresponding planar OFETs, which is attributed to reduced trapping effects of gate dielectrics in the VOFETs. Moreover, the bias‐stress stability can be further improved by doping PDVT‐10 to passivate bulk traps. Consequently, the characteristic time of doped PDVT‐10 VOFETs extracted from stretched exponential equation is found to be over four times larger than that of the planar PDVT‐10 OFETs under the same bias‐stress conditions. These results present the promising applications of VOFETs as well as an effective strategy to achieve highly bias‐stress stable OFETs.

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Redistributed Current Density in Lateral Organic Light‐Emitting Transistors Enabling Uniform Area Emission with Good Stability and Arbitrary Tunability

et al. 2022

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Organic light‐emitting transistors (OLETs), integrating the functions of an organic field‐effect transistor (OFET) and organic light‐emitting diode (OLED) in a single device, are promising for the next‐generation display technology. However, the great challenge of achieving uniform area emission in OLETs with good stability and arbitrary tunability hinders their development in this field. Herein, an effective solution to obtain well‐defined area emission in lateral OLETs by incorporating a charge‐transport buffer (CTB) layer between the conducting channel and emitting layer is proposed. Comprehensive theoretical simulation and experimental results demonstrate redistributed potential beneath the drain electrode under the shielding effect of the CBT layer, resulting in a highly uniform current density. In this case, uniform recombination of balanced holes and electrons can be guaranteed, which is essential for the formation of area emission in the following OLETs. RGB OLETs with uniform area emission are constructed, which show good gate tunable ability (ON/OFF ratio 106), high loop stability (over 200 cycles) and high aperture ratio (over 80%) due to the arbitrary tunability of the device geometry. This work provides a new avenue for constructing area‐emission lateral OLETs, which have great potential for display technology because of their good compatibility with conventional fabrication techniques.

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Efficient and low-voltage vertical organic permeable base light-emitting transistors

Cited by 43 publications

References 52 publications

En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review

Doped Vertical Organic Field‐Effect Transistors Demonstrating Superior Bias‐Stress Stability

Redistributed Current Density in Lateral Organic Light‐Emitting Transistors Enabling Uniform Area Emission with Good Stability and Arbitrary Tunability

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