Efficient and stable perovskite solar cells using manganese-doped nickel oxide as the hole transport layer

Abstract

The device based on a Mn-doped NiOx HTL retained 70% of its initial efficiency after 35 days’ storage under a continuous halogen lamp matrix exposure.

Interfacial modification between NiOx and perovskite layers with hexafluorophosphate salts for enhancing device efficiency and stability of perovskite solar cells

“…3a and b, the Fermi level ( E F ) of the pristine NiO x and NH 4 PF 6 , LiPF 6 , and NaPF 6 -modified NiO x films were calculated to be −4.09, −3.95, −3.89, and −3.88 eV, respectively, by subtracting the energy cutoff in the high binding energy region (about 17.3 eV) from the excitation photon energy (21.22 eV). 32 The valence band (VB) was then deduced from the low energy cutoff value (about 1 eV) to be −5.14, −5.4, −5.39, and −5.3 eV, respectively, for the original NiO x and NH 4 PF 6 , LiPF 6 , and NaPF 6 -modified NiO x films. The VB values obtained for the NiO x films in this work are comparable to previously reported values for NiO x in the literature.…”

“…S4, † several intense diffraction peaks at 2θ = 14.2°, 19.9°, 24.5°, 28.3°, 31.8°, 35°, 40.5°, and 43.1°w ere observed, corresponding to the (001), ( 011), ( 111), ( 002), (012), ( 112), (022), and (003) planes of the cubic perovskite phase, respectively, which are consistent with the previous reports. 32 Additionally, the perovskite films deposited on the salt-modified NiO x exhibit more intense diffraction peaks, indicating that salt incorporation promotes the growth of perovskite grains with higher crystallinity.…”

“…2f-h is attributed to the F atom from PF 6 − groups, 28,29 while the peak at around 684 eV corresponds to the interaction between F and Ni atoms. 30,31 32 The valence band (VB) was then deduced from the low energy cutoff value (about 1 eV) to be −5.14, −5.4, −5.39, and −5.3 eV, respectively, for the original NiO x and NH 4 PF 6 , LiPF 6 , and NaPF 6 -modified NiO x films.…”

Microwave-facilitated crystal growth of defect-passivated triple-cation metal halide perovskites toward efficient solar cells

“…[47][48][49][50] The PTAA/PFN bilayer has been used as the HTL in the control device with a high efficiency reaching a PCE of over 19%, but NiO x , particularly when solution-processed, typically leads to a lower PCE, ∼15-16%, with a V oc of ∼1 V for the control device. [51][52][53][54][55] Moreover, studies using NiO x often focus on the different processing techniques of NiO x films for engineering the interface between perovskites and NiO x to suppress the formation of interfacial defects. [56][57][58][59][60][61] Despite the restriction of the selection on the underlying charge transport layer, we highlight that (1) the microwave annealing in this work required a short processing time, less than 10 min, for perovskite grain growth, which is otherwise longer, ∼30 min, in the case of CTA and (2) we improved the photovoltaic performance by processing the perovskite films following a spin coating step with microwave treatments combined with simultaneous defect passivation.…”

Exploration and Optimization of the Polymer-Modified NiOx Hole Transport Layer for Fabricating Inverted Perovskite Solar Cells

“…To date, the interfacial modification of NiO x films has been implemented through combining NiO x with phthalocyanine or trimercapto-s-triazine trisodium salt [ 15 , 16 ]. On the other hand, transition metal doping such as Cu 2+ [ 17 , 18 ], Ag + [ 19 ], Co 2+ [ 20 , 21 ], Mn 2+ [ 22 ], and Zn 2+ [ 23 , 24 ] have proven their effectiveness in enhancing the hole mobility of NiO x films as well as the photovoltaic performance of corresponding PSCs.…”